MT48H16M32LFCM-75 IT ES Micron Technology Inc, MT48H16M32LFCM-75 IT ES Datasheet - Page 41
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MT48H16M32LFCM-75 IT ES
Manufacturer Part Number
MT48H16M32LFCM-75 IT ES
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H16M32LFCM-75_IT_ES.pdf
(86 pages)
Specifications of MT48H16M32LFCM-75 IT ES
Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
95mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
Burst Length
Burst Type
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Read and write accesses to the device are burst oriented, and the burst length (BL) is
programmable. The burst length determines the maximum number of column loca-
tions that can be accessed for a given READ or WRITE command. Burst lengths of 1, 2,
4, 8, or continuous locations are available for both the sequential and the interleaved
burst types, and a continuous page burst is available for the sequential type. The contin-
uous page burst is used in conjunction with the BURST TERMINATE command to
generate arbitrary burst lengths.
Reserved states should not be used, as unknown operation or incompatibility with fu-
ture versions may result.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst wraps within the block when a boundary is reached. The block
is uniquely selected by A[8:1] when BL = 2, A[8:2] when BL = 4, and A[8:3] when BL = 8.
The remaining (least significant) address bit(s) is (are) used to select the starting loca-
tion within the block. Continuous page bursts wrap within the page when the boundary
is reached.
Accesses within a given burst can be programmed to be either sequential or interleaved;
this is referred to as the burst type and is selected via bit M3.
The ordering of accesses within a burst is determined by the burst length, the burst
type, and the starting column address.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
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