MT48H16M32LFCM-75 IT ES Micron Technology Inc, MT48H16M32LFCM-75 IT ES Datasheet - Page 58
![](/photos/31/34/313421/mfg557-90-vfbga_sml.jpg)
MT48H16M32LFCM-75 IT ES
Manufacturer Part Number
MT48H16M32LFCM-75 IT ES
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet
1.MT48H16M32LFCM-75_IT_ES.pdf
(86 pages)
Specifications of MT48H16M32LFCM-75 IT ES
Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
95mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Figure 28: Random WRITE Cycles
Figure 29: WRITE-to-READ
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Note:
Note:
Command
Command
Address
Address
1. Each WRITE command can be issued to any bank. DQM is LOW.
1. The WRITE command can be issued to any bank, and the READ command can be to any
bank. DQM is LOW. CL = 2 for illustration.
CLK
CLK
DQ
DQ
WRITE
WRITE
Bank,
Bank,
Col n
Col n
D
D
T0
T0
IN
IN
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
WRITE
Bank,
Col a
NOP
D
T1
T1
D
IN
IN
58
WRITE
Bank,
Col x
READ
Bank,
Col b
D
T2
T2
IN
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
Bank,
Col m
T3
T3
NOP
D
IN
D
NOP
T4
OUT
Don’t Care
NOP
D
T5
OUT
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
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