BUK129-50DL NXP Semiconductors, BUK129-50DL Datasheet - Page 3

• Manufacturer Part Number: BUK129-50DL
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK129-50DL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 50V
• Continuous Drain Current: 16A
• Power Dissipation: 65W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
OUTPUT CHARACTERISTICS
Limits are for -40˚C ≤ T
OVERLOAD CHARACTERISTICS
-40˚C ≤ T
1 Trip time t
2 This is independent of the dV/dt of input voltage V
May 2001
Logic level TOPFET
SMD version of BUK118-50DL
SYMBOL PARAMETER
V
I
R
SYMBOL PARAMETER
I
P
T
T
DSS
D
DSC
j(TO)
(CL)DSS
D(TO)
DS(ON)
mb
d sc
≤ 150˚C unless otherwise specified.
varies with overload dissipation P
Off-state
Drain-source clamping voltage
Drain source leakage current
On-state
Drain-source resistance
Short circuit load
Drain current limiting
Overload protection
Overload power threshold
Characteristic time
Overtemperature protection
Threshold junction
temperature
mb
2
≤ 150˚C; typicals are for T
D
according to the formula t
IS
.
CONDITIONS
V
I
I
V
I
V
V
CONDITIONS
V
V
4.4 V ≤ V
4 V ≤ V
V
device trips if P
which determines trip time
D
DM
DM
IS
DS
IS
IS
DS
IS
IS
= 10 mA
= 2 A; t
= 6 A; t
= 0 V
≥ 4.4 V
≥ 4 V
= 5 V;
= 5 V;T
= 40 V
= 13 V
mb
IS
= 25 ˚C unless otherwise specified
IS
≤ 5.5 V
p
p
mb
3
≤ 5.5 V
≤ 300 µs; δ ≤ 0.01
≤ 300 µs; δ ≤ 0.01
= 25˚C
d sc
D
≈ T
> P
DSC
D(TO)
/ ln[ P
T
T
T
T
mb
mb
mb
mb
1
D
= 25 ˚C
= 25 ˚C
= 25 ˚C
/ P
= 25˚C
D(TO)
].
MIN.
MIN.
200
150
50
50
16
12
40
8
-
-
-
-
-
-
TYP.
TYP.
120
350
170
0.1
60
36
39
24
BUK129-50DL
-
-
-
-
-
-
Product specification
MAX.
MAX.
100
100
160
600
70
10
95
50
55
32
36
36
-
-
Rev 1.900
UNIT
UNIT
mΩ
mΩ
mΩ
mΩ
µA
µA
µs
˚C
W
V
V
A
A
A