BUK129-50DL NXP Semiconductors, BUK129-50DL Datasheet - Page 4

• Manufacturer Part Number: BUK129-50DL
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK129-50DL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 50V
• Continuous Drain Current: 16A
• Power Dissipation: 65W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40˚C ≤ T
SWITCHING CHARACTERISTICS
T
1 The input voltage below which the overload protection circuits will be reset.
2 Not directly measureable from device terminals.
May 2001
Logic level TOPFET
SMD version of BUK118-50DL
SYMBOL PARAMETER
V
I
I
V
t
V
R
mb
SYMBOL PARAMETER
t
t
t
t
IS
ISL
lr
d on
r
d off
f
IS(TO)
ISR
(CL)IS
IG
= 25 ˚C; V
Input threshold voltage
Input supply current
Input supply current
Protection reset voltage
Latch reset time
Input clamping voltage
Input series resistance
to gate of power MOSFET
Turn-on delay time
Rise time
Turn-off delay time
Fall time
DD
= 13 V; resistive load R
mb
≤ 150˚C; typicals are for T
2
1
L
= 4 Ω. Refer to waveform figure and test circuit.
CONDITIONS
V
normal operation;
protection latched;
reset time t
V
I
CONDITIONS
V
V
I
DS
IS1
IS
IS
= 1.5 mA
= 5 V
= 0 V
= 5 V; I
= 5 V, V
mb
= 25˚C unless otherwise specified
4
r
D
≥ 100 µs
IS2
= 1 mA
< 1 V
T
V
V
V
V
T
mb
mb
IS
IS
IS
IS
= 5 V
= 4 V
= 5 V
= 3 V
= 25˚C
= 25˚C
MIN.
MIN.
100
200
130
0.6
1.1
1.5
5.5
80
10
-
-
-
-
-
TYP.
TYP.
220
195
400
250
1.6
40
33
15
30
70
35
BUK129-50DL
2
-
-
Product specification
MAX.
MAX.
400
330
650
430
100
140
2.4
2.1
2.9
8.5
30
60
70
-
Rev 1.900
UNIT
UNIT
µA
µA
µA
µA
kΩ
µs
µs
µs
µs
µs
V
V
V
V