TC58FVM5T2ATG65 Toshiba, TC58FVM5T2ATG65 Datasheet

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TC58FVM5T2ATG65

Manufacturer Part Number
TC58FVM5T2ATG65
Description
Manufacturer
Toshiba
Datasheet

Specifications of TC58FVM5T2ATG65

Cell Type
NOR
Density
32Mb
Access Time (max)
65ns
Interface Type
Parallel
Boot Type
Top
Address Bus
22/21Bit
Operating Supply Voltage (typ)
2.5/3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP-I
Program/erase Volt (typ)
8.5 to 9.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
55mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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32MBIT (4M × 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
flash memory organized as 4194304 × 8 bits or as 2097152 × 16 bits. The TC58FVM5T2A/B2A/T3A/B3A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVM5T2A/B2A/T3A/B3A also features a Simultaneous Read/Write operation so that data can be read during a
Write or Erase operation.
FEATURES
The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
Power supply voltage
Operating temperature
Organization
Functions
Block erase architecture
Boot block architecture
V
Ta = −40°C~85°C
4M × 8 bits/2M × 16 bits
Simultaneous Read/Write
Page Read (8 word/16 byte)
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
8 × 8 Kbytes/63 × 64 Kbytes
TC58FVM5T2A/3A: top boot block
TC58FVM5B2A/3A: bottom boot block
DD
= 2.3 V~3.6 V
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Organization of 4Banks
Mode control
Erase/Program cycles
Access Time (Random/Page)
Power consumption
Package
TC58FVM5**AFT:
TC58FVM5**AXB:
TC58FVM5T2A
TC58FVM5B2A
TC58FVM5T3A
TC58FVM5B3A
Compatible with JEDEC standard commands
10
10 µA (Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
5 mA (Page Read operation)
11 mA (Address Increment Read operation)
2.7~3.6 V
2.3~3.6 V
5
V
cycles typ.
TSOPI48-P-1220-0.50 (weight: 0.51 g)
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
Rate of Size
DD
TC58FVM5(T/B)(2/3)A(FT/XB)65
65 ns/25 ns
70 ns/30 ns
CL = 30 pF
BK0
1
1
3
1
CL = 100 pF
70 ns/30 ns
75 ns/35 ns
BK1
3
3
3
1
2003-06-30 1/64
BK2
3
3
1
3
BK3
1
1
1
3

Related parts for TC58FVM5T2ATG65

TC58FVM5T2ATG65 Summary of contents

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... TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M × 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 × 8 bits or as 2097152 × 16 bits. The TC58FVM5T2A/B2A/T3A/B3A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard ...

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... T2 = Page mode/Top boot block/1:3:3 Page mode/Bottom boot block/1:3:3 Page mode/Top boot block/3:3:1 Page mode/Bottom boot block/1:1:3:3 Capacity M5 = 32Mbits Supply Voltage system Device type F = NOR Flash memory 2 Toshiba CMOS E PROM Boot block Bank ratio Top 1:3:3:1 Bottom Top 3:3:1:1 Bottom 1:1:3:3 Top ...

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PIN ASSIGNMENT (TOP VIEW) A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 9 A20 RESET /ACC A18 16 A17 ...

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BLOCK DIAGRAM /ACC Control Circuit WE BYTE RESET CE Command Register OE A0 A20 A-1 TC58FVM5(T/B)(2/3)A(FT/XB) Buffer Memory Cell Memory Cell Memory Cell Array Array Array Bank0 Bank1 Bank2 ...

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MODE SELECTION MODE CE Read/Page Read ID Read (Manufacturer Code) ID Read (Device Code) Standby Output Disable Write Block Protect 1 Block Protect 2 Verify Block Protect Temporary Block Unprotect Hardware Reset/Standby Boot Block Protect Notes ...

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COMMAND SEQUENCES BUS FIRST BUS COMMAND WRITE WRITE CYCLE SEQUENCE CYCLES Addr. REQ’D Read/Reset 1 XXXh Word 555h Read/Reset 3 Byte AAAh Word 555h ID Read 3 Byte AAAh Word 555h Auto-Program 4 Byte AAAh Word 11 555h Auto PageProgram ...

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SIMULTANEOUS READ/WRITE OPERATION The TC58FVM5T2A/B2A/T3A/B3A features a Simultaneous Read/Write operation. The Simultaneous Read/Write operation enables the device to simultaneously write data to or erase data from a bank while reading data from another bank. The TC58FVM5T2A/B2A/T3A/B3A has a total of ...

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ID Read Mode ID Read Mode is used to read the device maker code and device code. The mode is useful in that it allows EPROM programmers to identify the device type automatically. ID read can be executed in two ...

Page 9

Command Write The TC58FVM5T2A/B2A/T3A/B3A uses the standard JEDEC control commands for a single-power supply 2 E PROM. A Command Write is executed by inputting the address and data into the Command Register. The command is written by inputting a pulse ...

Page 10

Auto-Program Mode The TC58FVM5T2A/B2A/T3A/B3A can be programmed in either byte or word units. Auto-Program Mode is set using the Program command. The program address is latched on the falling edge of the WE signal and data is latched on the ...

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Program Suspend/Resume Mode Program Suspend is used to enable Data Read by suspending the Write operation. The device accepts a Program Suspend command in Write Mode (including Write operations performed during Erase Suspend) but ignores the command in other modes. ...

Page 12

Auto Block Erase/Auto Multi-Block Erase Modes The Auto Block Erase Mode and Auto Multi-Block Erase Mode are set using the Block Erase command. The block address is latched on the falling edge of the WE signal in the sixth bus ...

Page 13

BLOCK PROTECTION Block Protection is a function for disabling writing and erasing specific blocks. Block protection can be carried out in two ways: by supplying a high voltage (V voltage and a command sequence (see Block protection 2). (1) Block ...

Page 14

Hidden ROM Area The TC58FVM5T2A/B2A/T3A/B3A features a 64-Kbyte hidden ROM area which is separate from the memory cells. The area consists of one block. Data Read, Write and Protect can be performed on this block. Because Protect cannot be released, ...

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... COMMON FLASH MEMORY INTERFACE (CFI) The TC58FVM5T2A/B2A/T3A/B3A conforms to the CFI specifications. To read information from the device, input the Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the Reset command. CFI CODE TABLE ADDRESS A6~A0 ...

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ADDRESS A6~A0 DATA DQ15~DQ0 2Ch 0002h 2Dh 0007h 2Eh 0000h 2Fh 0020h 30h 0000h 31h 003Eh 32h 0000h 33h 0000h 34h 0001h 40h 0050h 41h 0052h 42h 0049h 43h 0031h 44h 0031h 45h 0000h 46h 0002h 47h 0001h 48h 0001h ...

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ADDRESS A6~A0 DATA DQ15~DQ0 57h 0004h 58h 00XXh 59h 00XXh 5Ah 00XXh 5Bh 00XXh TC58FVM5(T/B)(2/3)A(FT/XB)65 DESCRIPTION Bank Organization 00h: Data at 4Ah is zero X: Number of Banks Bank0 Region information X = Number of blocks in Bank0 TC58FVM5T2A: 08h ...

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HARDWARE SEQUENCE FLAGS The TC58FVM5T2A/B2A/T3A/B3A has a Hardware Sequence flag which allows the device status to be determined during an auto mode operation. The output data is read out using the same timing as that used when ...

Page 19

DQ6 (Toggle bit 1) The device status can be determined by the Toggle Bit function during an Auto-Program or auto-erase operation. The Toggle bit begins toggling on the rising edge the last bus cycle. DQ6 alternately outputs ...

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... Then, even if a proper command is input, the device may not operate. To avoid this possibility, clear the Command Register before command input environment prone to system noise, Toshiba recommend input of a software or hardware reset before command input. ...

Page 21

ABSOLUTE MAXIMUM RATINGS SYMBOL V V Supply Voltage Input Voltage IN V Input/Output Voltage DQ V Maximum Input Voltage for A9, OE and RESET IDH V Maximum Input Voltage for ACCH P Power Dissipation D T Soldering ...

Page 22

DC CHARACTERISTICS SYMBOL PARAMETER I Input Leakage Current LI I Output Leakage Current LO V Output High Voltage OH V Output Low Voltage OL V Average Random Read DD I DDO1 Current I V Average Program Current DDO2 DD I ...

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AC CHARACTERISTICS AND OPERATING CONDITIONS READ CYCLE Product name VDD voltage (V) Output load capacitance (CL) SYMBOL PARAMETER t Read Cycle Time RC t Page Read Cycle Time PRC t Address Access Time ACC t CE Access Time CE t ...

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COMMAND WRITE/PROGRAM/ERASE CYCLE SYMBOL t Command Write Cycle Time CMD Address Set-up Time/ BYTE Set-up Time tAS t Address Hold Time/ BYTE Hold Time AH t Data Set-up Time DS t Data Hold Time Low-Level Hold Time ...

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TIMING DIAGRAMS Read/ID Read Operation Address OEH D OUT ID Read Operation (apply OUT Read Mode Page Read ...

Page 26

Address(A3-20))) Address(0- OUT Hi-Z Read after command input (Only Hidden Rom/CFI Read) Last command address Address Command data D OUT TC58FVM5(T/B)(2/3)A(FT/XB) PRC RC t ACC PACC ...

Page 27

Command Write Operation This is the timing of the Command Write Operation. The timing which is described in the following pages is essentially the same as the timing shown on this page. • WE Control Address ...

Page 28

ID Read Operation (input command sequence) 555h Address t CMD OES WE AAh OUT Read Mode (input of ID Read command sequence) (Continued) Address 555h t CMD AAh ...

Page 29

Auto-Program Operation ( WE Address 555h t CMD OES WE D AAh IN D OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data TC58FVM5(T/B)(2/3)A(FT/XB)65 Control) 2AAh 555h PA 55h A0h ...

Page 30

Auto Page Program Operation ( Address(A3-20) 555h 2AAh Address(A0- OES WE AAh 55h OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program Data TC58FVM5(T/B)(2/3)A(FT/XB)65 WE Control ...

Page 31

Auto Chip Erase/Auto Block Erase Operation ( Address 555h t CMD OES WE D AAh IN t VDS V DD Note: Word Mode address shown. BA: Block address for Auto Block Erase operation Auto-Program Operation ( CE ...

Page 32

Auto Page Program Operation ( Address(A3-20) 555h 2AAh Address(A0- OES WE AAh 55h OUT t VDS V DD Note: Word Mode address shown. PA: Program address PD: Program data TC58FVM5(T/B)(2/3)A(FT/XB)65 Control ...

Page 33

Auto Chip Erase/Auto Block Erase Operation ( 555h Address t CMD OES WE AAh VDS V DD Note: Word Mode address shown. BA: Block address for Auto Block Erase operation TC58FVM5(T/B)(2/3)A(FT/XB)65 Control) CE 2AAh ...

Page 34

Program/Erase Suspend Operation BK Address B0h D IN Hi-Z D OUT Program/Erase Mode RA: Read address Program/Erase Resume Operation Address OES WE t DF1 t DF2 ...

Page 35

during Auto Program/Erase Operation Hardware Reset Operation WE RESET RESET Read after Address RESET D OUT TC58FVM5(T/B)(2/3)A(FT/XB)65 Command input sequence READY ...

Page 36

BYTE during Read Operation CE t CEBTS OE BYTE DQ0~DQ7 DQ8~DQ14 DQ15/A-1 Address • Byte → Word CE t CEBTS OE BYTE DQ0~DQ7 DQ8~DQ14 DQ15/A-1 Address TC58FVM5(T/B)(2/3)A(FT/XB)65 t BTD Data Output Data Output Data Output t ACC Data Output Address ...

Page 37

BYTE during Write Operation CE WE BYTE TC58FVM5(T/B)(2/3)A(FT/XB) 2003-06-30 37/64 ...

Page 38

DATA Hardware Sequence Flag ( Last Address Command Address t CMD Last D Command IN Data DQ7 DQ0~DQ6 t BUSY PA: Program address BA: Block address Hardware Sequence Flag (Toggle bit) Address CE t ...

Page 39

Block Protect 1 Operation Address VPT VPS WE t CESP CE D OUT BA: Block address * : 01h indicates that block is protected. TC58FVM5(T/B)(2/3)A(FT/XB)65 ...

Page 40

Block Protect 2 Operation Address t CMD VPS RESET D 60h IN D OUT BA: Block address Address of next block * : 01h indicates that ...

Page 41

FLOWCHARTS Auto-Program Address = Address + 1 Note: The above command sequence takes place in Word Mode. TC58FVM5(T/B)(2/3)A(FT/XB)65 Start Auto-Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes Auto-Program Completed Auto-Program Command Sequence (address/data) 555h/AAh ...

Page 42

Auto-Page Program Address = Address + 1 Program address (A2=0,A1=0,A0=0) / Program data Program address (A2=0,A1=0,A0=1) / Program data Program address (A2=0,A1=1,A0=0) / Program data Program address (A2=0,A1=1,A0=1) / Program data TC58FVM5(T/B)(2/3)A(FT/XB)65 START Auto page program command sequence ( see ...

Page 43

Fast Program Address = Address + 1 Fast Program Set Command Sequence (address/data) 555h/AAh 2AAh/55h 555h/20h TC58FVM5(T/B)(2/3)A(FT/XB)65 Start Fast Program Set Command Sequence (see below) Fast Program Command Sequence (see below) DATA Polling or Toggle Bit No Last Address? Yes ...

Page 44

Auto Erase Auto Chip Erase Command Sequence (address/data) 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Note: The above command sequence takes place in Word Mode. TC58FVM5(T/B)(2/3)A(FT/XB)65 Start Auto Erase Command Sequence (see below) DATA Polling or Toggle Bit Auto Erase Completed ...

Page 45

DQ7 DATA Polling Start Read Byte (DQ0~DQ7) Addr DQ7 = Data? No DQ5 = 1? Read Byte (DQ0~DQ7) Addr DQ7 = Data? Fail DQ6 Toggle Bit Start Read Byte (DQ0~DQ7) Addr DQ6 = Toggle? ...

Page 46

Block Protect 1 PLSCNT = 1 Set up Block Address Addr. = BPA Wait for 4 µ Wait for 4 µ s Wait for 100 µ s Wait for 4 µ s Wait for ...

Page 47

Block Protect 2 RESET = V Wait for 4 µ s PLSCNT = 1 Block Protect 2 Command First Bus Write Cycle Set up Address Addr. = BPA Block Protect 2 Command Second Bus Write Cycle Wait for 100 µ ...

Page 48

BLOCK ADDRESS TABLES (1) TC58FVM5T2A (top boot block) BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 L L BA1 L L BA2 L L BA3 L L BK0 BA4 L L BA5 ...

Page 49

BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA32 BA33 BA34 BA35 BA36 BA37 BA38 ...

Page 50

BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 BA64 BA65 BA66 BK3 BA67 BA68 ...

Page 51

TC58FVM5B2A (bottom boot block) BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BA4 ...

Page 52

BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA31 BA32 BA33 BA34 BK1 BA35 BA36 ...

Page 53

BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 BA64 BA65 BA66 BK3 BA67 BA68 ...

Page 54

TC58FVM5T3A (top boot block) BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BA4 ...

Page 55

BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA32 BA33 BA34 BA35 BA36 BA37 BA38 ...

Page 56

BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 BA64 BA65 BA66 BK3 BA67 BA68 ...

Page 57

TC58FVM5B3A (bottom boot block) BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA0 BA1 BA2 BA3 BA4 ...

Page 58

BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA31 BA32 BA33 BA34 BA35 BA36 BA37 ...

Page 59

BANK BLOCK BANK ADDRESS # # A20 A19 A18 A17 A16 A15 A14 A13 A12 BA63 BA64 BA65 BA66 BK3 BA67 BA68 ...

Page 60

BLOCK SIZE TABLE (1) TC58FVM5T2A (top boot block) BLOCK SIZE BLOCK # BYTE MODE WORD MODE BA0~BA7 64 Kbytes BA8~BA31 64 Kbytes BA32~BA55 64 Kbytes BA56~BA62 64 Kbytes BA63~BA70 8 Kbytes (2) TC58FVM5B2A (bottom boot block) BLOCK SIZE BLOCK # ...

Page 61

PACKAGE DIMENSIONS TC58FVM5(T/B)(2/3)A(FT/XB)65 2003-06-30 61/64 Unit: mm ...

Page 62

PACKAGE DIMENSIONS TC58FVM5(T/B)(2/3)A(FT/XB)65 2003-06-30 62/64 Unit: mm ...

Page 63

Revision History Date Version 2002- 06-20 1.00 Original version 2002- 07-31 1.01 Added V 2002- 08-06 1.02 Added I 2002- 08-26 1.03 Added DC Typical Value. Added FBGA package. 2002- 09-10 1.04 Added Ordering information. 2002-10-24 1.05 Generalize Added the ...

Page 64

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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