MT46V8M16TG-75Z Micron Technology Inc, MT46V8M16TG-75Z Datasheet - Page 12

• Manufacturer Part Number: MT46V8M16TG-75Z
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V8M16TG-75Z

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 140mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

Electrical Specifications – I
Table 6:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
128Mb_DDR_x4x8x16_D2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
Parameter/Condition
Operating one-bank active-precharge current:
t
changing once per clock cycle; Address and control inputs
changing once every two clock cycles
Operating one-bank active-read-precharge current:
Burst = 2;
and control inputs
Precharge power-down standby current: All banks idle;
Power-down mode;
Idle standby current: CS# = HIGH; All banks are idle;
t
changing once per clock
Active power-down standby current: One bank active;
down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One bank
active
changing twice per clock cycle; Address and other control inputs
changing once per clock cycle
Operating burst read current: Burst = 2;
reads; One bank active; Address and control inputs changing once
per clock cycle;
Operating burst write current: Burst = 2; Continuous burst
writes;
once per clock cycle;
changing twice per clock cycle
Auto refresh burst current:
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current: Four bank
interleaving READs (Burst = 4) with auto precharge;
t
inputs change only during ACTIVE, READ, or WRITE commands
RC =
CK =
RC = minimum
;
t
t
RC (MIN);
CK (MIN);
t
One bank
RC =
t
RC =
t
RAS (MAX);
I
V
0°C ≤ T
t
DD
CK =
DD
t
t
CK =
t
RC allowed;
RC (MIN);
t
Q = +2.6V ±0.1V, V
CKE = HIGH; Address and other control inputs
Specifications and Conditions (x4, x8; -5B, -6T, -75E, -75Z, -75)
CK =
active; Address and control inputs changing
t
changing once per clock cycle
t
A
CK (MIN); CKE = LOW
CK =
t
t
CK =
CK (MIN);
≤ +70°C; Notes: 1–5, 11, 13, 15, 47; Notes appear on pages 26–31; See also Table 8 on page 14
t
CK (MIN); DQ, DM, and DQS inputs
cycle.
t
CK =
t
CK (MIN); CKE = (LOW)
t
CK (MIN); DQ, DM, and DQS inputs
t
CK =
t
CK =
V
t
CK (MIN); DQ, DM, and DQS inputs
I
IN
OUT
t
CK (MIN); I
=
t
CK (MIN); Address and control
DD
V
= 0mA
REF
= +2.6V ±0.1V (-5B); V
for DQ, DQS, and DM
DD
OUT
Continuous burst
t
t
Standard
Low power (L)
RFC =
RFC = 15.6µs
= 0mA; Address
t
RFC (MIN)
Power-
12
DD
Q = +2.5V ±0.2V, V
Symbol -5B
I
I
I
I
I
I
I
I
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
DD
I
I
DD
DD
I
I
I
DD 2
DD
DD
DD
DD
DD
DD
4W
3N
5A
6A
3P
4R
2F
0
1
5
6
7
P
128Mb: x4, x8, x16 DDR SDRAM
115
135
165
165
240
355
1.3
50
30
50
3
6
4
Electrical Specifications – I
DD
125
135
145
145
265
355
-6T
1.3
= +2.5V ±0.2V (-6T, -75E, -75Z, -75);
45
25
50
3
5
4
-75E -75Z/-75 Units Notes
110
120
130
130
220
330
1.3
45
25
50
3
5
4
©2004 Micron Technology, Inc. All rights reserved.
105
120
130
130
220
325
1.3
40
25
45
3
5
4
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
23, 48
23, 48
24, 33
24, 33
23, 48
28, 50
23, 49
51
23
23
50
12
12
DD