MT46V8M16TG-75Z Micron Technology Inc, MT46V8M16TG-75Z Datasheet - Page 59
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MT46V8M16TG-75Z
Manufacturer Part Number
MT46V8M16TG-75Z
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V8M16TG-75Z.pdf
(81 pages)
Specifications of MT46V8M16TG-75Z
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
140mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
Figure 32:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
COMMAND
ADDRESS
BA0, BA1
Case 1:
Case 2:
DQS
DQS
CK#
CKE
A10
DM
DQ
DQ
CK
t
t
AC (MIN) and
AC (MAX) and
Bank READ – Without Auto Precharge
Notes:
t
t
IS
NOP
IS
T0
t
1
t
IH
t
IH
DQSCK (MIN)
t
DQSCK (MAX)
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. The PRECHARGE command can only be applied at T5 if
4. Disable auto precharge.
5. “Don’t Care” if A10 is HIGH at T5.
6. DO n (or b) = data-out from column n (or column b); subsequent elements are provided in
7. Refer to Figure 33 on page 60, Figure 34 on page 61, and Figure 35 on page 62 for detailed
t
t
Bank x
times.
the programmed order.
DQS and DQ timing.
IS
IS
Row
Row
ACT
T1
t
t
IH
IH
t
CK
t
t RAS 3
t
RCD
RC
NOP
T2
1
t
CH
t
CL
Bank x
READ
t
4
IS
Col n
T3
2
t
t
IH
LZ (MIN)
59
CL = 2
NOP
T4
t
1
RPRE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
LZ (MIN)
t
RPRE
ALL BANKS
ONE BANK
Bank x
128Mb: x4, x8, x16 DDR SDRAM
PRE
T5
t
3
DO
DQSCK (MIN)
t
n
5
DQSCK (MAX)
t
AC (MIN)
DO
t
n
AC (MAX)
T5n
t
RAS (MIN) is met.
t
DON’T CARE
RP
NOP
T6
1
©2004 Micron Technology, Inc. All rights reserved.
t
HZ (MAX)
T6n
t
RPST
t
RPST
NOP
T7
TRANSITIONING DATA
1
Operations
Bank x
Row
Row
ACT
T8