TD62503FG Toshiba, TD62503FG Datasheet - Page 3

TD62503FG

Manufacturer Part Number
TD62503FG
Description
Manufacturer
Toshiba
Datasheet

Specifications of TD62503FG

Transistor Polarity
NPN
Collector-emitter Voltage
35V
Dc Current Gain (min)
50
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
16
Lead Free Status / Rohs Status
Compliant

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0
Electrical Characteristics
Test Circuit
Precautions for Using
excess current or voltage will not be applied to the IC.
short-circuit between outputs, air contamination fault, or fault by improper grounding.
This IC does not integrate protection circuits such as overcurrent and overvoltage protectors.
Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that
Utmost care is necessary in the design of the output line, V
Output leakage current
Collector-emitter saturation voltage
DC current transfer ratio
Input voltage
(Output on)
Turn-ON delay
Turn-OFF delay
1. I
4. t
Note 1: Pulse width 50 μs, Duty cycle 10%
Note 2: Input Condition
Note 3: C
Open
generator
Pulse
CEX
ON
(Note 1)
, t
V
IN
Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns
OFF
Characteristics
L
Input
TD62502PG/FG
TD62503PG/FG
includes probe and jig capacitance
Type Number
(Note 2)
R
1
TD62502PG/FG
TD62503PG/FG
I
CEX
B
V
E
CE
C
V
OUT
(Ta = 25°C)
V
V
= 35 V
Symbol
CE (sat)
IN (ON)
R
I
t
C
h
t
CEX
OFF
V
15 V
ON
L
3 V
2. h
FE
L
IH
= 3.3 kΩ
I
= 15 pF
(Note 3)
IN
Output
FE
Circuit
, V
Test
1
2
2
3
4
CE (sat)
V
CE
V
I
I
V
I
V
C
IN
IN
IN
CE
CE
OUT
L
3
, V
Input
Output
= 1 mA, I
= 3 mA, I
= 1 mA, I
= 15 pF
I
C
= 25V, V
= 10 V, I
CE (sat)
= 35 V, R
CC
10%
h
Test Condition
FE
and GND line since IC may be destroyed due to
C
C
C
C
IN
t
= 10 mA
= 150 mA
= 10 mA
=
r
= 10 mA
50%
L
= 0 V
90%
I
I
= 3.3k Ω
IN
t
C
ON
50 μs
50%
3. V
I
V
IN
IN (ON)
90%
TD62502~503PG/FG
IN (ON)
50%
Min
2.4
50
13
t
f
10%
t
OFF
Typ.
200
3.4
17
50
50%
2009-12-14
Max
0.2
0.8
4.2
10
23
I
C
V
0
V
V
IH
OH
OL
Unit
μA
ns
V
V

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