TD62503FG Toshiba, TD62503FG Datasheet - Page 8

• Manufacturer Part Number: TD62503FG
• Manufacturer: Toshiba

Specifications of TD62503FG

• Transistor Polarity: NPN
• Collector-emitter Voltage: 35V
• Dc Current Gain (min): 50
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 16
• Lead Free Status / Rohs Status: Compliant

About solderability, following conditions were confirmed
• Solderability
Points to Remember on Handling of ICs
(1) Use of Sn-37Pb solder Bath
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
(1)
(2)
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the
device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at
any time and condition. These ICs generate heat even during normal use. An inadequate IC heat
radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In
addition, please design the device taking into considerate the effect of IC heat radiation with
peripheral components.
Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to
the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power
supply is small, the device’s motor power supply and output pins might be exposed to conditions
beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF into
consideration in system design.
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TD62502~503PG/FG
2009-12-14