BFQ34 NXP Semiconductors, BFQ34 Datasheet

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BFQ34

Manufacturer Part Number
BFQ34
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFQ34

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
18V
Collector-base Voltage
25V
Emitter-base Voltage
2V
Collector Current (dc) (max)
150mA
Dc Current Gain (min)
25
Power Dissipation
2.7W
Frequency (max)
4GHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Screw
Pin Count
4
Lead Free Status / Rohs Status
Not Compliant

Available stocks

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Manufacturer
Quantity
Price
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BFQ34
Manufacturer:
PHILIPS
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10
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BFQ34
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NXP
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BFQ34
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BFQ34
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Part Number:
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5 510
Product specification
File under Discrete Semiconductors, SC14
DATA SHEET
BFQ34
NPN 4 GHz wideband transistor
DISCRETE SEMICONDUCTORS
September 1995

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BFQ34 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. September 1995 PINNING PIN DESCRIPTION Code: BFQ34/01 1 collector 2 emitter 3 base ...

Page 3

... T storage temperature stg T junction temperature j THERMAL RESISTANCE SYMBOL R thermal resistance from junction to case th j-c September 1995 CONDITIONS open emitter open base open collector 160 C c PARAMETER 3 Product specification BFQ34 MIN. MAX. UNIT 150 mA 2 150 C 200 C THERMAL RESISTANCE 15 K/W ...

Page 4

... MHz; T Figs 2 and 7 and note 3 note 4 note 5 is zero and – 120 mA amb = 799 MHz. ( MIN. TYP. MAX. UNIT = 500 MHz 3 MHz amb = amb = amb Product specification BFQ34 100 3.5 GHz 4 GHz 2 2. 1. 16 dBm 45 dBm ...

Page 5

... FE 2 output 75 DUT 24 MEA322 V CE Fig.3 MEA320 handbook, halfpage T f (GHz ( Fig.5 5 Product specification 120 120 = current gain as a function of collector current 120 = 500 MHz Transition frequency as a function of collector current. BFQ34 MBB361 160 I (mA) C MBB357 160 I (mA) C ...

Page 6

... Philips Semiconductors NPN 4 GHz wideband transistor 40 handbook, halfpage gain (dB – 120 mA amb Fig.6 Gain as a function of frequency. September 1995 MEA319 handbook, halfpage d im (dB (GHz) V Fig 100 1 793.25 MHz Intermodulation distortion as a function of collector current. Product specification BFQ34 MEA321 150 (mA) ...

Page 7

... Fig.8 Common emitter input reflection coefficient (S handbook, full pagewidth 180 I = 120 mA amb Fig.9 Common emitter forward transmission coefficient (S September 1995 1 0.5 1200 MHz 1000 800 0.2 0.5 1 500 200 0 120 200 MHz 150 500 800 1000 1200 150 120 90 7 Product specification MEA315 ). MEA317 ). 21 BFQ34 ...

Page 8

... I = 120 mA amb Fig.11 Common emitter output reflection coefficient (S September 1995 90 120 150 500 200 MHz 120 90 1 0.5 0.2 0.5 1 800 1000 500 1200 200 MHz 0 Product specification 60 1200 1000 30 800 0.1 0 MEA318 ). MEA316 ). 22 BFQ34 ...

Page 9

... BeO metal scale 6.48 7.24 27.56 9.91 3.18 6.22 6.93 25.78 9.14 2.66 REFERENCES JEDEC EIAJ detail max. 1.66 11.82 3.86 3.38 1.02 1.39 11.04 2.92 2.74 EUROPEAN PROJECTION Product specification BFQ34 SOT122A 8-32 0.381 90 UNC ISSUE DATE 97-04-18 ...

Page 10

... These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 10 Product specification BFQ34 ...

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