BFQ34 NXP Semiconductors, BFQ34 Datasheet - Page 6

• Manufacturer Part Number: BFQ34
• Manufacturer: NXP Semiconductors

Specifications of BFQ34

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 150mA
• Dc Current Gain (min): 25
• Power Dissipation: 2.7W
• Frequency (max): 4GHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
September 1995
handbook, halfpage
NPN 4 GHz wideband transistor
I
c
gain
(dB)
= 120 mA; V
40
30
20
10
0
10
Fig.6 Gain as a function of frequency.
–1
CE
= 15 V; T
amb
= 25 C.
1
G UM
Is
12
I
2
f (GHz)
MEA319
10
6
handbook, halfpage
d im
(dB)
V
Fig.7
o
= 1.2 V; V
20
30
40
50
60
70
50
Intermodulation distortion as a function of
collector current.
CE
= 15 V; f
(p q r)
= 793.25 MHz
100
I
C
Product specification
(mA)
MEA321
BFQ34
150