BFQ34 NXP Semiconductors, BFQ34 Datasheet - Page 2

• Manufacturer Part Number: BFQ34
• Manufacturer: NXP Semiconductors

Specifications of BFQ34

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 150mA
• Dc Current Gain (min): 25
• Power Dissipation: 2.7W
• Frequency (max): 4GHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
DESCRIPTION
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
QUICK REFERENCE DATA
September 1995
V
V
I
P
f
V
P
ITO
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
C
T
SYMBOL
CBO
CEO
tot
o
L1
NPN 4 GHz wideband transistor
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
transition frequency
output voltage
output power at 1 dB gain
compression
third order intercept point
PARAMETER
PINNING
PIN
1
2
3
4
Code: BFQ34/01
collector
emitter
base
emitter
WARNING
open emitter
open base
up to T
I
I
T
f
I
f = 800 MHz; T
I
T
C
C
(p q-r)
C
C
amb
amb
DESCRIPTION
= 150 mA; V
= 120 mA; V
= 120 mA; V
= 120 mA; V
2
= 25 C; d
= 25 C
= 793.25 MHz
c
= 160 C
CONDITIONS
amb
CE
CE
CE
CE
im
= 60 dB
= 15 V; f = 500 MHz 4
= 15 V; R
= 15 V; R
= 15 V; R
= 25 C
lfpage
L
L
L
= 75 ;
= 75 ;
= 75 ;
Top view
Fig.1 SOT122A.
1
1.2
26
45
TYP.
Product specification
4
25
18
150
2.7
MAX.
2
BFQ34
MBK187
3
V
V
mA
W
GHz
V
dBm
dBm
UNIT