PHP225 NXP Semiconductors, PHP225 Datasheet - Page 5

Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology

PHP225

Manufacturer Part Number
PHP225
Description
Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet

Specifications of PHP225

Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.25Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
20V
Continuous Drain Current
2.3A
Power Dissipation
2W
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SO
Lead Free Status / Rohs Status
Compliant

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Quantity:
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NXP Semiconductors
6. Characteristics
Table 6.
PHP225
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
I
Dynamic characteristics
Q
Q
Q
C
C
C
g
t
t
Source-drain diode
V
t
DSS
GSS
DSon
off
on
rr
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
on-state drain current
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
transfer conductance
turn-off time
turn-on time
source-drain voltage
reverse recovery time
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
V
V
V
V
V
V
V
I
T
V
T
V
V
R
I
I
V
D
D
D
S
S
j
j
DS
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
L
= 25 °C
= 25 °C
= -1.25 A; V
= -1.25 A; dI
= -10 µA; V
= -1 mA; V
= -2.3 A; V
= 20 Ω; T
= -24 V; V
= -1 V; V
= -5 V; V
= -20 V; V
= -20 V; I
= -20 V; V
= 20 V; V
= -20 V; V
= -10 V; I
= -4.5 V; I
= 0 V; V
Rev. 04 — 17 March 2011
j
DS
DS
DS
GS
GS
D
= 25 °C; I
D
GS
DS
D
GS
GS
GS
GS
DS
S
= -1 A; T
= -1 A; T
= 25 V; T
/dt = 100 A/µs;
= V
= -0.5 A; T
= -15 V; V
= -10 V
= -4.5 V
= 0 V; T
= 0 V; T
= -10 V; R
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
GS
; T
D
j
j
j
j
j
j
= -1 A
= 25 °C
= 25 °C
j
j
j
= 25 °C
= 25 °C
= 25 °C
= 25 °C
GS
= 25 °C
= 25 °C
= 25 °C
j
G(ext)
= 25 °C
= -10 V;
= 4.7 Ω;
Dual P-channel intermediate level FET
Min
-30
-1
-
-
-
-
-
-2.3
-1
-
-
-
-
-
-
1
-
-
-
-
Typ
-
-
-
-
-
0.22
0.33
-
-
10
1
3
250
140
50
2
50
20
-
150
© NXP B.V. 2011. All rights reserved.
PHP225
Max
-
-2.8
-100
100
100
0.25
0.4
-
-
25
-
-
-
-
-
-
140
80
-1.6
200
Unit
V
V
nA
nA
nA
A
A
nC
nC
nC
pF
pF
pF
S
ns
ns
V
ns
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