PHP225 NXP Semiconductors, PHP225 Datasheet - Page 6

• Manufacturer Part Number: PHP225
• Description: Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHP225

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Continuous Drain Current: 2.3A
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PHP225
Product data sheet
Fig 4.
Fig 6.
(pF)
(A)
I
600
400
200
−10
C
D
−8
−6
−4
−2
0
0
voltage; P-channel; typical values
function of gate-source voltage; P-channel;
typical values
Capacitance as a function of drain-source
Transfer characteristics: drain current as a
0
0
−2
−10
−4
−20
C
C
C
oss
−6
rss
iss
V
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DS
V
GS
(V)
mbe157
mbe144
(V)
−30
−8
Rev. 04 — 17 March 2011
Fig 5.
Fig 7.
V
(V)
GS
−10
−10
(A)
I
−8
−6
−4
−2
−8
−6
−4
−2
D
0
0
function of drain-source voltage; P-channel;
typical values
charge; P-channel; typical values
Output characteristics: drain current as a
Gate-source voltage as a function of gate
0
0
V
−10 V
GS
Dual P-channel intermediate level FET
−2
=
−2
−7.5 V
−4
−4
−6
−6
−8
© NXP B.V. 2011. All rights reserved.
−8
−10
PHP225
Q
−2.5 V
V
−3.5 V
−6 V
−4.5 V
−3 V
g
−5 V
−4 V
mbe154
mbe145
DS
(nC)
(V)
−10
−12
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