PHP225 NXP Semiconductors, PHP225 Datasheet - Page 9

• Manufacturer Part Number: PHP225
• Description: Dual intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHP225

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Continuous Drain Current: 2.3A
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
8. Revision history
Table 7.
PHP225
Product data sheet
Document ID
PHP225 v.4
Modifications:
PHP225 v.3
Revision history
Release date
20110317
20110104
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 17 March 2011
Change notice
-
-
Dual P-channel intermediate level FET
Supersedes
PHP225 v.3
PHP225 v.2
© NXP B.V. 2011. All rights reserved.
PHP225
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