RC28F320C3TD90 Micron Technology Inc, RC28F320C3TD90 Datasheet - Page 24

• Manufacturer Part Number: RC28F320C3TD90
• Manufacturer: Micron Technology Inc

Specifications of RC28F320C3TD90

• Lead Free Status / Rohs Status: Not Compliant

Table 7:
6.2
Table 8:
Datasheet
24
Notes:
1.
2.
3.
4.
5.
V
V
V
V
V
V
V
I
I
Sym
I
IL
IH
OL
OH
PPLK
PP1
PP2
PPES
Sym
I
PPWS
PPW
PPE
/
All currents are in RMS unless otherwise noted. Typical values at nominal V
The test conditions V
listed at the top of each column. V
Automatic Power Savings (APS) reduces I
Sampled, not 100% tested.
I
and I
V
V
V
Current
CCES
Input Low
Voltage
Input High
Voltage
Output Low
Voltage
Output High
Voltage
V
Out Voltage
V
Program /
Erase
Operations
Parameter
PP
PP
CC
PP
PP
Erase Current
Program Current
Erase Suspend
CCR
Lock-
during
or I
DC Current Characteristics (Sheet 2 of 2)
DC Voltage Characteristics (Sheet 1 of 2)
Parameter
. If the device is read while in program suspend, current draw is the sum of I
DC Voltage Characteristics
CCWS
is specified with device de-selected. If device is read while in erase suspend, current draw is sum of I
V
Note
V
1,2
CCQ
1
1
CC
CC
Max, V
–0.1V
V
–0.4
1.65
11.4
Min
–0.1
2.0
V
Note
CCQ
V
2.7 V–3.6 V
2.7 V–3.6 V
1,4
1,4
1,4
CCQ
CC
CCQ
Max, V
CC
0.22 V
0.05
0.05
V
+0.3V
Typ
2.7 V–3.6
2.7 V–3.6
0.2
Max
12.6
50
Max = 3.3 V for 0.25μm 32-Mbit devices.
V
CC
1.0
3.6
8
8
0.1
CCQ
CC
V
V
*
CCR
Min, and V
Max
200
0.1
0.1
22
22
5
to approximately standby levels in static operation (CMOS inputs).
V
V
CCQ
CCQ
–0.4
0.4V
0.1V
1.65
11.4
-0.1
Min
2.7 V–2.85 V
1.65 V–2.5 V
2.7 V–2.85 V
1.65 V–2.5 V
0.05
0.05
Typ
0.2
16
50
8
CCQ
–
–
Min refer to the maximum or minimum V
Max
200
0.1
0.1
22
45
+0.3V
5
Max
12.6
V
0.4
0.1
1.0
3.6
CCQ
2.7 V–3.3 V
1.8 V–2.5 V
0.05
0.05
Typ
0.2
16
50
8
V
V
CCQ
0.4V
CCQ
0.1V
–0.4
1.65
11.4
Min
-0.1
2.7 V–3.3 V
1.8 V–2.5 V
Max
CC
200
0.1
0.1
22
45
5
, T
–
–
A
= +25 °C.
Unit
mA
mA
mA
mA
µA
µA
+0.3V
Max
12.6
V
CCWS
0.4
0.1
1.0
3.6
CCQ
V
Program in Progress
V
Program in Progress
V
Erase in Progress
V
Erase in Progress
V
Program or Erase Suspend in
Progress
V
Program or Erase Suspend in
Progress
PP
PP
PP
PP
PP
PP
and I
= V
=V
= V
= V
= V
= V
Unit
V
V
V
V
V
V
V
Test Conditions
CCR
PP1,
PP2 (12v)
PP1,
PP2 (12v) ,
PP1,
PP2 (12v) ,
CC
.
or V
V
V
I
V
V
I
Complete Write
Protection
Test Conditions
OL
OH
CC
CCQ
CC
CCQ
CCQ
= 100 μA
= –100 μA
= V
= V
= V
= V
C3 Discrete
voltage
CC
CC
March 2008
290645-24
CCQ
CCQ
Min
Min
Min
Min
CCES