RC28F320C3TD90 Micron Technology Inc, RC28F320C3TD90 Datasheet - Page 25

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RC28F320C3TD90

Manufacturer Part Number
RC28F320C3TD90
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of RC28F320C3TD90

Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F320C3TD90
Manufacturer:
INTEL
Quantity:
70
Part Number:
RC28F320C3TD90
Manufacturer:
INTEL
Quantity:
289
C3 Discrete
Table 8:
March 2008
290645-24
V
V
V
V
V
Notes:
1.
2.
IL
IH
OL
LKO
LKO2
Sym
Erase and Program are inhibited when V
Applying V
and 2500 cycles on the parameter blocks. V
Input Low
Voltage
Input High
Voltage
Output Low
Voltage
V
Erase
Lock
Voltage
V
Erase
Lock
Voltage
Parameter
CC
CCQ
Prog/
DC Voltage Characteristics (Sheet 2 of 2)
Prog/
PP
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
Note
V
V
CCQ
CC
–0.4
Min
–0.1
2.0
1.5
1.2
2.7 V–3.6 V
2.7 V–3.6 V
0.22 V
V
+0.3V
Max
V
CC
0.1
CCQ
PP
*
< V
PP
PPLK
may be connected to 12 V for a total of 80 hours maximum.
V
CCQ
0.4V
–0.4
Min
-0.1
1.5
1.2
2.7 V–2.85 V
1.65 V–2.5 V
and not guaranteed outside the valid V
+0.3V
Max
V
0.4
0.1
CCQ
V
CCQ
–0.4
0.4V
-0.1
Min
1.5
1.2
2.7 V–3.3 V
1.8 V–2.5 V
+0.3V
Max
V
0.4
0.1
CCQ
PP
ranges of V
Unit
V
V
V
V
V
V
V
I
Test Conditions
OL
CC
CCQ
PP1
= 100 μA
= V
= V
and V
CC
CCQ
Datasheet
Min
PP2
Min
.
25

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