RC28F320C3TD90 Micron Technology Inc, RC28F320C3TD90 Datasheet - Page 28

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RC28F320C3TD90

Manufacturer Part Number
RC28F320C3TD90
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of RC28F320C3TD90

Lead Free Status / Rohs Status
Not Compliant

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Table 11: Read Operations—32-Mbit Density
Datasheet
28
R10
Notes:
1.
2.
3.
4.
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
t
t
t
t
t
t
t
t
t
Sym
GHQZ
AVQV
GLQV
PHQV
GLQX
EHQZ
AVAV
ELQV
ELQX
t
OH
OE# may be delayed up to t
Sampled, but not 100% tested.
See
See
and maximum allowable input slew rate.
Figure 9, “Read Operation Waveform” on page 29
Figure 11, “AC Input/Output Reference Waveform” on page 34
Read Cycle Time
Address to Output
Delay
CE# to Output Delay
OE# to Output Delay
RP# to Output Delay
CE# to Output in
Low Z
OE# to Output in
Low Z
CE# to Output in
High Z
OE# to Output in
High Z
Output Hold from
Address, CE#, or
OE# Change,
Whichever Occurs
First
Paramet
er
Produc
Densit
V
y
t
CC
ELQV–
(ns)
Min
2.7 V–3.6
70
0
0
0
70 ns
t
V
GLQV
(ns)
Max
150
70
70
20
20
20
after the falling edge of CE# without impact on t
(ns)
Min
2.7 V–3.6
90
0
0
0
90 ns
V
(ns)
Max
150
90
90
20
20
20
(ns)
Min
3.0 V–3.3
90
0
0
0
V
(ns)
Max
150
90
90
30
20
20
32 Mbit
100 ns
.
(ns)
Min
2.7 V–3.3
100
0
0
0
V
(ns)
Max
100
100
150
30
20
20
for timing measurements
Min
100
3.0 V–3.3
(ns
0
0
0
)
ELQV
V
.
Max
(ns
100
100
150
30
20
20
)
110 ns
(ns)
Min
2.7 V–3.3
110
0
0
0
V
Max
(ns)
110
110
150
C3 Discrete
30
20
20
March 2008
290645-24
Note
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4
s

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