RC28F320C3TD90 Micron Technology Inc, RC28F320C3TD90 Datasheet - Page 27

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RC28F320C3TD90

Manufacturer Part Number
RC28F320C3TD90
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of RC28F320C3TD90

Lead Free Status / Rohs Status
Not Compliant

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C3 Discrete
Table 10: Read Operations—16-Mbit Density
March 2008
290645-24
Notes:
1.
2.
3.
4.
R10
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
t
t
t
t
t
t
t
t
t
Sym
GHQZ
AVQV
GLQV
PHQV
GLQX
EHQZ
AVAV
ELQV
ELQX
t
OE# may be delayed up to t
Sampled, but not 100% tested.
See
See
maximum allowable input slew rate.
OH
Figure 9, “Read Operation Waveform” on page 29
Figure 11, “AC Input/Output Reference Waveform” on page 34
Read Cycle Time
Address to Output
Delay
CE# to Output Delay
OE# to Output
Delay
RP# to Output Delay
CE# to Output in
Low Z
OE# to Output in
Low Z
CE# to Output in
High Z
OE# to Output in
High Z
Output Hold from
Address, CE#, or
OE# Change,
Whichever Occurs
First
Paramet
er
Densit
Produ
V
ct
y
CC
ELQV–
(ns)
Min
2.7 V–3.6
70
0
0
0
70 ns
t
GLQV
V
Max
(ns)
150
70
70
20
20
20
after the falling edge of CE# without impact on t
(ns)
Min
2.7 V–3.6
80
0
0
0
80 ns
V
Max
(ns)
150
80
80
20
20
20
(ns)
Min
3.0 V–3.6
80
0
0
0
V
(ns)
Max
150
16 Mbit
80
80
30
20
20
.
90 ns
(ns)
Min
2.7 V–3.6
90
0
0
0
V
Max
(ns)
150
90
90
30
20
20
for timing measurements and
Min
(ns
100
ELQV
0
0
0
)
3.0 V–
3.6V
.
(ns
100
100
150
Ma
30
20
20
x
)
110 ns
Min
110
(ns
)
0
0
0
2.7 V–
3.6V
110
110
150
(ns
Ma
30
20
20
x
)
Datasheet
Note
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4
s
27

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