SUD50N024-06P Vishay, SUD50N024-06P Datasheet

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SUD50N024-06P

Manufacturer Part Number
SUD50N024-06P
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SUD50N024-06P

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.006Ohm
Drain-source On-volt
22V
Gate-source Voltage (max)
±20V
Continuous Drain Current
80A
Power Dissipation
6.8W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / Rohs Status
Not Compliant
Notes
a.
b.
c.
d.
Document Number: 72289
S-509104—Rev. B, 09-May-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Pulse Voltage
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on FR4 Board, t v 10 sec.
Limited by package
Pulse condition: T
Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.
DS
24
24
Ordering Information: SUD50N024-06P
C
C
(V)
G
Top View
TO-252
D
A
S
= 105_C, 50 ns, 300 kHz operation
a
a
0.0095 @ V
0.006 @ V
a
a
SUD50N024-06P—E3 (Lead (Pb)-Free)
Drain Connected to Tab
r
DS(on)
N-Channel 22-V (D-S) 175_C MOSFET
Parameter
Parameter
GS
GS
(W)
= 10 V
= 4.5 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
80
64
(A)
Steady State
T
L = 0.1 mH
T
T
t v 10 sec
T
C
C
A
C
d
= 100_C
= 25_C
= 25_C
= 25_C
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% R
D Lead (Pb)-Free Version is RoHS Compliant
APPLICATIONS
D Synchronous Buck DC/DC Conversion
Symbol
Symbol
V
− Desktop
− Server
T
DS(pulse)
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
AS
D
D
S
D
D
stg
g
Tested
Typical
1.9
18
40
G
SUD50N024-06P
N-Channel MOSFET
−55 to 175
Limit
"20
6.8
24
100
101
80
56
Vishay Siliconix
22
26
45
65
C
d
d
a
D
S
Maximum
2.3
22
50
www.vishay.com
Available
Pb-free
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
A
1

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SUD50N024-06P Summary of contents

Page 1

... 0.0095 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N024-06P SUD50N024-06P—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... SUD50N024-06P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance a Dynamic ...

Page 3

... T − Junction Temperature (_C) J Document Number: 72289 S-509104—Rev. B, 09-May-05 0.010 0.008 25_C 125_C 0.006 0.004 0.002 0.000 100 100 125 150 175 SUD50N024-06P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...

Page 4

... SUD50N024-06P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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