SUD50N024-06P Vishay, SUD50N024-06P Datasheet - Page 2

• Manufacturer Part Number: SUD50N024-06P
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SUD50N024-06P

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.006Ohm
• Drain-source On-volt: 22V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 80A
• Power Dissipation: 6.8W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Not Compliant

Notes
a.
b.
c.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
SUD50N024-06P
Vishay Siliconix
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain Source On State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
160
140
120
100
c
c
80
60
40
20
0
a
0
Parameter
c
c
c
c
c
b
b
2
V
V
b
DS
GS
Output Characteristics
− Drain-to-Source Voltage (V)
= 10 thru 5 V
b
J
4
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
R
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
8
4 V
3 V
2 V
C
10
V
I
V
V
V
V
D
= 25_C)
GS
DS
DS
DS
GS
^ 50 A, V
= 0 V, V
I
= 20 V, V
= 10 V, V
V
= 10 V, I
F
V
V
V
V
V
V
V
DS
V
V
10 V, V
= 50 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
GS
F
GS
DS
= 0 V, V
= 50 A, V
= V
= 10 V, R
= 10 V, R
= 0 V, I
= 20 V, V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
DS
GEN
D
GS
GS
GS
GS
= 10 V, f = 1 MHz
= 20 A, T
, I
= 10 V, R
= 0 V, T
GS
= 4.5 V, I
D
D
GS
GS
D
4.5 V, I
= 250 mA
D
L
L
GS
D
= 250 mA
= "20 V
= 20 A
= 0.2 W
= 0.2 W
= 20 A
= 20 A
= 10 V
= 0 V
= 0 V
J
J
= 125_C
g
g
= 125_C
D
D
100
= 2.5 W
80
60
40
20
= 50 A
0
50 A
0.0
0.5
1.0
V
Transfer Characteristics
GS
Min
1.5
0.8
0.7
− Gate-to-Source Voltage (V)
22
50
15
25_C
T
2.0
C
= 125_C
0.0046
0.0073
Typ
2550
900
415
1.5
7.5
6.0
1.2
S-509104—Rev. B, 09-May-05
19
11
10
24
35
2.5
9
a
Document Number: 72289
3.0
−55_C
0.0084
0.0095
"100
Max
0.006
100
3.0
2.1
1.5
50
30
20
15
35
15
70
3.5
1
4.0
Unit
nC
nC
nA
mA
mA
pF
p
ns
ns
ns
W
W
W
V
V
A
S
A
V
4.5