SUD50N024-06P Vishay, SUD50N024-06P Datasheet - Page 3

• Manufacturer Part Number: SUD50N024-06P
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SUD50N024-06P

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.006Ohm
• Drain-source On-volt: 22V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 80A
• Power Dissipation: 6.8W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 72289
S-509104—Rev. B, 09-May-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3500
3000
2500
2000
1500
1000
100
500
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
−50 −25
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
= 30 A
C
T
= 10 V
rss
C
10
4
V
T
0
= −55_C
DS
J
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
I
Transconductance
D
25
− Drain Current (A)
Capacitance
20
8
50
C
C
oss
iss
75
30
12
100
125
40
16
125_C
25_C
150
175
50
20
0.010
0.008
0.006
0.004
0.002
0.000
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 50 A
T
On-Resistance vs. Drain Current
= 10 V
J
V
0.3
V
20
8
= 150_C
GS
SD
Q
= 4.5 V
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
SUD50N024-06P
− Drain Current (A)
Gate Charge
40
16
0.6
Vishay Siliconix
60
24
0.9
T
V
V
J
GS
GS
= 25_C
= 6.3 V
= 10 V
www.vishay.com
80
32
1.2
100
40
1.5
3