JS28F640J3D75 Micron Technology Inc, JS28F640J3D75 Datasheet - Page 26
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JS28F640J3D75
Manufacturer Part Number
JS28F640J3D75
Description
Manufacturer
Micron Technology Inc
Datasheet
1.JS28F640J3D75.pdf
(68 pages)
Specifications of JS28F640J3D75
Cell Type
NOR
Density
64Mb
Access Time (max)
75ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
JS28F640J3D75
Manufacturer:
INTEL
Quantity:
5 530
Company:
Part Number:
JS28F640J3D75
Manufacturer:
INTEL
Quantity:
9
Part Number:
JS28F640J3D75
Manufacturer:
INTEL
Quantity:
20 000
Company:
Part Number:
JS28F640J3D75A
Manufacturer:
INTEL
Quantity:
5 530
Company:
Part Number:
JS28F640J3D75A
Manufacturer:
INTEL
Quantity:
5 530
Company:
Part Number:
JS28F640J3D75A
Manufacturer:
NUMONYX
Quantity:
3 456
Part Number:
JS28F640J3D75A
Manufacturer:
NUMONYX
Quantity:
20 000
Part Number:
JS28F640J3D75E
Manufacturer:
MUMONYS
Quantity:
20 000
Part Number:
JS28F640J3D75ES
Manufacturer:
INTEL
Quantity:
20 000
Figure 13: 8-Word Asynchronous Page Mode Read
Notes:
1.
2.
Datasheet
26
CE
CE0, CE1, or CE2 that disables the device.
In this diagram, BYTE# is asserted high
X
low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
A[MAX:4] [A]
D[15:0] [Q]
A[3:1] [A]
WE# [W]
OE# [G]
RP# [P]
CEx [E]
BYTE#
R6
R5
R2
R7
R3
R4
1
R10
R1
R1
R15
2
Numonyx™ Embedded Flash Memory (J3 v. D)
7
X
high is defined at the first edge of
8
R10
R9
R8
November 2007
308551-05