PIC18F1320-H/ML Microchip Technology, PIC18F1320-H/ML Datasheet - Page 69
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PIC18F1320-H/ML
Manufacturer Part Number
PIC18F1320-H/ML
Description
IC MCU 8BIT 8KB FLASH 28QFN
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheet
1.PIC18F1220-ISO.pdf
(308 pages)
Specifications of PIC18F1320-H/ML
Core Processor
PIC
Core Size
8-Bit
Speed
25MHz
Connectivity
UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 150°C
Package / Case
28-VQFN Exposed Pad
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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7.0
The data EEPROM is readable and writable during
normal operation over the entire V
memory is not directly mapped in the register file
space. Instead, it is indirectly addressed through the
Special Function Registers (SFR).
There are four SFRs used to read and write the
program and data EEPROM memory. These registers
are:
• EECON1
• EECON2
• EEDATA
• EEADR
The EEPROM data memory allows byte read and write.
When interfacing to the data memory block, EEDATA
holds the 8-bit data for read/write and EEADR holds the
address of the EEPROM location being accessed.
These devices have 256 bytes of data EEPROM with
an address range from 00h to FFh.
The EEPROM data memory is rated for high erase/
write cycle endurance. A byte write automatically
erases the location and writes the new data (erase-
before-write). The write time is controlled by an on-chip
timer. The write time will vary with voltage and
temperature, as well as from chip to chip. Please
refer to parameter D122 (Table 22-1 in Section 22.0
“Electrical Characteristics”) for exact limits.
7.1
The address register can address 256 bytes of data
EEPROM.
7.2
EECON1 is the control register for memory accesses.
EECON2 is not a physical register. Reading EECON2
will read all ‘0’s. The EECON2 register is used
exclusively in the memory write and erase sequences.
Control bit, EEPGD, determines if the access will be to
program or data EEPROM memory. When clear,
operations will access the data EEPROM memory.
When set, program memory is accessed.
© 2007 Microchip Technology Inc.
DATA EEPROM MEMORY
EECON1 and EECON2 Registers
EEADR
DD
range. The data
Control bit, CFGS, determines if the access will be to
the configuration registers or to program memory/data
EEPROM memory. When set, subsequent operations
access configuration registers. When CFGS is clear,
the EEPGD bit selects either program Flash or data
EEPROM memory.
The WREN bit enables and disables erase and write
operations. When set, erase and write operations are
allowed. When clear, erase and write operations are
disabled – the WR bit cannot be set while the WREN bit
is clear. This mechanism helps to prevent accidental
writes to memory due to errant (unexpected) code
execution.
Firmware should keep the WREN bit clear at all times,
except when starting erase or write operations. Once
firmware has set the WR bit, the WREN bit may be
cleared. Clearing the WREN bit will not affect the
operation in progress.
The WRERR bit is set when a write operation is
interrupted by a Reset. In these situations, the user can
check the WRERR bit and rewrite the location. It is
necessary to reload the data and address registers
(EEDATA and EEADR), as these registers have
cleared as a result of the Reset.
Control bits, RD and WR, start read and erase/write
operations, respectively. These bits are set by firmware
and cleared by hardware at the completion of the
operation.
The RD bit cannot be set when accessing program
memory (EEPGD = 1). Program memory is read using
table read instructions. See Section 6.1 “Table Reads
and Table Writes” regarding table reads.
Note:
PIC18F1220/1320
Interrupt flag bit, EEIF in the PIR2 register,
is set when write is complete. It must be
cleared in software.
DS39605F-page 67
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