PIC18F1320-H/ML Microchip Technology, PIC18F1320-H/ML Datasheet - Page 72
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
PIC18F1320-H/ML
Manufacturer Part Number
PIC18F1320-H/ML
Description
IC MCU 8BIT 8KB FLASH 28QFN
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheet
1.PIC18F1220-ISO.pdf
(308 pages)
Specifications of PIC18F1320-H/ML
Core Processor
PIC
Core Size
8-Bit
Speed
25MHz
Connectivity
UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 150°C
Package / Case
28-VQFN Exposed Pad
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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PIC18F1220/1320
7.7
Data EEPROM memory has its own code-protect bits in
configuration
operations are disabled if either of these mechanisms
are enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect configuration bit. Refer to Section 19.0
“Special Features of the CPU” for additional
information.
EXAMPLE 7-3:
TABLE 7-1:
DS39605F-page 70
INTCON
EEADR
EEDATA
EECON2
EECON1
IPR2
PIR2
PIE2
Legend: x = unknown, u = unchanged, – = unimplemented, read as ‘0’. Shaded cells are not used during Flash/EEPROM access.
Loop
Name
Operation During Code-Protect
CLRF
BCF
BCF
BCF
BSF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ
BRA
BCF
BSF
EEPROM Address Register
EEPROM Data Register
EEPROM Control Register 2 (not a physical register)
GIE/GIEH
OSCFIP
OSCFIF
OSCFIE
EEPGD
Bit 7
words.
REGISTERS ASSOCIATED WITH DATA EEPROM MEMORY
EEADR
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
EECON1, RD
55h
EECON2
AAh
EECON2
EECON1, WR
EECON1, WR
$-2
EEADR, F
Loop
EECON1, WREN
INTCON, GIE
DATA EEPROM REFRESH ROUTINE
PEIE/GIEL TMR0IE
External
CFGS
Bit 6
—
—
—
read
Bit 5
—
—
—
—
and
FREE
Bit 4
INTE
EEIP
EEIF
EEIE
; Start at address 0
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
; Disable writes
; Enable interrupts
write
WRERR
RBIE
Bit 3
—
—
—
7.8
The data EEPROM is a high endurance, byte address-
able array that has been optimized for the storage of fre-
quently changing information (e.g., program variables or
other data that are updated often). Frequently changing
values will typically be updated more often than specifi-
cation D124. If this is not the case, an array refresh must
be performed. For this reason, variables that change
infrequently (such as constants, IDs, calibration, etc.)
should be stored in Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
TMR0IF
WREN
LVDIP
LVDIF
LVDIE
Note:
Bit 2
Using the Data EEPROM
TMR3IP
TMR3IF
TMR3IE
If data EEPROM is only used to store
constants and/or data that changes rarely,
an array refresh is likely not required. See
specification D124.
Bit 1
INTF
WR
Bit 0
RBIF
RD
—
—
—
© 2007 Microchip Technology Inc.
0000 000x 0000 000u
0000 0000 0000 0000
0000 0000 0000 0000
xx-0 x000 uu-0 u000
1--1 -11- 1--1 -11-
0--0 -00- 0--0 -00-
0--0 -00- 0--0 -00-
POR, BOR
Value on:
—
Value on
all other
Resets
—
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