TDA8541T/N1,112 NXP Semiconductors, TDA8541T/N1,112 Datasheet - Page 10

• Manufacturer Part Number: TDA8541T/N1,112
• Description: IC AMP AUDIO PWR 1.2W MONO 8SOIC
• Manufacturer: NXP Semiconductors
• Type: Class ABr

Specifications of TDA8541T/N1,112

• Output Type: 1-Channel (Mono)
• Package / Case: 8-SOIC (3.9mm Width)
• Max Output Power X Channels @ Load: 1.2W x 1 @ 8 Ohm
• Voltage - Supply: 2.2 V ~ 18 V
• Features: Depop, Mute, Short-Circuit and Thermal Protection, Standby
• Mounting Type: Surface Mount
• Product: Class-AB
• Output Power: 1.2 W
• Available Set Gain: 30 dB
• Thd Plus Noise: 0.15 %
• Operating Supply Voltage: 5 V
• Supply Current: 8 mA
• Maximum Power Dissipation: 800 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Audio Load Resistance: 8 Ohms
• Input Bias Current (max): 500 nA
• Input Signal Type: Differential or Single
• Minimum Operating Temperature: - 40 C
• Output Signal Type: Differential, Single
• Supply Type: Single
• Supply Voltage (max): 18 V
• Supply Voltage (min): 2.2 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3475-5; 935211650112; TDA8541TD

NXP Semiconductors
SE APPLICATION
1998 Apr 01
handbook, full pagewidth
handbook, halfpage
1 W BTL audio amplifier
f = 1 kHz, G
(1) V
(2) V
(3) V
Gain
10
10
THD
(%)
10
−1
−2
CC
CC
CC
10
=
1
−2
= 7.5 V, R
= 9 V, R
= 12 V, R
R2
------- -
R1
v
Fig.14 THD as a function of P
= 20 dB.
L
L
= 8 Ω.
L
= 16 Ω.
= 4 Ω.
10
1 μF
−1
C1
V in
(2)
(1)
(3)
11 kΩ
R1
R2
47 μF
C2
110 kΩ
1
P o (W)
MODE
o
MGD884
.
SVR
IN −
IN +
10
Fig.13 SE application.
4
3
2
1
TDA8541
10
7
6
GND
handbook, halfpage
P
(1) V
(2) V
(3) V
o
THD
= 0.5 W, G
10
10
5
8
(%)
10
−1
−2
CC
CC
CC
1
10
OUT −
OUT +
Fig.15 THD as a function of frequency.
MBH882
= 7.5 V, R
= 9 V, R
= 12 V, R
v
= 20 dB.
L
(1)
(2)
(3)
100 nF
L
470 μF
= 8 Ω.
L
10
= 16 Ω.
= 4 Ω.
C3
2
10
R L
3
100 μF
V CC
Product specification
10
4
TDA8541
f (Hz)
MGD885
10
5