TDA8541T/N1,112 NXP Semiconductors, TDA8541T/N1,112 Datasheet - Page 8

• Manufacturer Part Number: TDA8541T/N1,112
• Description: IC AMP AUDIO PWR 1.2W MONO 8SOIC
• Manufacturer: NXP Semiconductors
• Type: Class ABr

Specifications of TDA8541T/N1,112

• Output Type: 1-Channel (Mono)
• Package / Case: 8-SOIC (3.9mm Width)
• Max Output Power X Channels @ Load: 1.2W x 1 @ 8 Ohm
• Voltage - Supply: 2.2 V ~ 18 V
• Features: Depop, Mute, Short-Circuit and Thermal Protection, Standby
• Mounting Type: Surface Mount
• Product: Class-AB
• Output Power: 1.2 W
• Available Set Gain: 30 dB
• Thd Plus Noise: 0.15 %
• Operating Supply Voltage: 5 V
• Supply Current: 8 mA
• Maximum Power Dissipation: 800 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Audio Load Resistance: 8 Ohms
• Input Bias Current (max): 500 nA
• Input Signal Type: Differential or Single
• Minimum Operating Temperature: - 40 C
• Output Signal Type: Differential, Single
• Supply Type: Single
• Supply Voltage (max): 18 V
• Supply Voltage (min): 2.2 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3475-5; 935211650112; TDA8541TD

NXP Semiconductors
1998 Apr 01
handbook, halfpage
handbook, halfpage
1 W BTL audio amplifier
P
(1) V
(2) V
THD = 10%.
(1) R
(2) R
o
THD
= 0.5 W, G
10
10
(%)
(W)
P o
2.5
1.5
0.5
10
−1
−2
CC
CC
2
1
0
L
L
1
10
= 8 Ω.
= 16 Ω.
0
Fig.6 THD as a function of frequency.
= 5 V, R
= 9 V, R
v
Fig.8 P
= 20 dB.
L
L
= 8 Ω.
= 16 Ω.
10
2
o
4
as a function of V
(1)
10
3
(1)
8
(2)
10
(2)
V CC (V)
4
CC
f (Hz)
.
MGD878
MGD880
10
12
5
8
handbook, halfpage
handbook, halfpage
V
(1) G
(2) G
(3) G
(1) R
(2) R
Fig.9
CC
SVRR
(dB)
(W)
−20
−40
−60
−80
1.5
0.5
= 5 V, 8 Ω, R
P
2
1
0
L
L
v
v
v
10
Fig.7 SVRR as a function of frequency.
= 30 dB.
= 20 dB.
= 6 dB.
= 8 Ω.
= 16 Ω.
0
Worst case power dissipation as a function
of V
CC
s
.
= 0 Ω, V
10
2
4
i
= 100 mV.
10
3
(2)
(3)
(1)
(1)
8
Product specification
10
(2)
V CC (V)
4
TDA8541
f (Hz)
MGD881
MGD879
10
12
5