AT32UC3A3128S Atmel Corporation, AT32UC3A3128S Datasheet - Page 222
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AT32UC3A3128S
Manufacturer Part Number
AT32UC3A3128S
Description
Manufacturer
Atmel Corporation
Datasheets
1.AT32UC3A0128.pdf
(377 pages)
2.AT32UC3A0128.pdf
(33 pages)
3.AT32UC3A0128.pdf
(159 pages)
4.AT32UC3A3128.pdf
(91 pages)
5.AT32UC3A3128.pdf
(1012 pages)
Specifications of AT32UC3A3128S
Flash (kbytes)
128 Kbytes
Pin Count
144
Max. Operating Frequency
66 MHz
Cpu
32-bit AVR
# Of Touch Channels
32
Hardware Qtouch Acquisition
No
Max I/o Pins
110
Ext Interrupts
110
Usb Transceiver
1
Usb Speed
Hi-Speed
Usb Interface
Device + OTG
Spi
6
Twi (i2c)
2
Uart
4
Lin
4
Ssc
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
16
Temp. Sensor
No
Crypto Engine
AES
Sram (kbytes)
128
Self Program Memory
YES
External Bus Interface
1
Dram Memory
sdram
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
3.0 to 3.6
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
6
Output Compare Channels
18
Input Capture Channels
12
Pwm Channels
12
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
- AT32UC3A0128 PDF datasheet
- AT32UC3A0128 PDF datasheet #2
- AT32UC3A0128 PDF datasheet #3
- AT32UC3A3128 PDF datasheet #4
- AT32UC3A3128 PDF datasheet #5
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16.6.3
16.6.4
16.7
16.7.1
32072G–11/2011
Functional Description
Clocks
Interrupts
SDRAM Device Initialization
The clock for the SDRAMC bus interface (CLK_SDRAMC) is generated by the Power Manager.
This clock is enabled at reset, and can be disabled in the Power Manager. It is recommended to
disable the SDRAMC before disabling the clock, to avoid freezing the SDRAMC in an undefined
state.
The SDRAMC interrupt request line is connected to the interrupt controller. Using the SDRAMC
interrupt requires the interrupt controller to be programmed first.
The initialization sequence is generated by software. The SDRAM devices are initialized by the
following sequence:
1. SDRAM features must be defined in the CR register by writing the following fields with
2. For mobile SDRAM devices, Temperature Compensated Self Refresh (TCSR), Drive
3. The Memory Device Type field must be defined in the Memory Device Register
4. A No Operation (NOP) command must be issued to the SDRAM devices to start the
5. A minimum pause of 200µs is provided to precede any signal toggle.
6. An All Banks Precharge command must be issued to the SDRAM devices. The user
7. Eight Auto Refresh commands are provided. The user must write the value four to the
8. A Load Mode Register command must be issued to program the parameters of the
9. For mobile SDRAM initialization, an Extended Load Mode Register command must be
10. The user must go into Normal Mode, writing the value 0 to the MR.MODE field and per-
11. Write the refresh rate into the Refresh Timer Count field in the Refresh Timer Register
the desired value: asynchronous timings (TXSR, TRAS, TRCD, TRP, TRC, and TWR),
Number of Columns (NC), Number of Rows (NR), Number of Banks (NB), CAS Latency
(CAS), and the Data Bus Width (DBW).
Strength (DS) and Partial Array Self Refresh (PASR) fields must be defined in the Low
Power Register (LPR).
(MDR.MD).
SDRAM clock. The user must write the value one to the Command Mode field in the
SDRAMC Mode Register (MR.MODE) and perform a write access to any SDRAM
address.
must write the value two to the MR.MODE field and perform a write access to any
SDRAM address.
MR.MODE field and performs a write access to any SDRAM location eight times.
SDRAM devices in its Mode Register, in particular CAS latency, burst type, and burst
length. The user must write the value three to the MR.MODE field and perform a write
access to the SDRAM. The write address must be chosen so that BA[1:0] are set to
zero. See
issued to program the SDRAM devices parameters (TCSR, PASR, DS). The user must
write the value five to the MR.MODE field and perform a write access to the SDRAM.
The write address must be chosen so that BA[1] or BA[0] are equal to one. See
16.8.1
forming a write access at any location in the SDRAM.
(TR.COUNT). The refresh rate is the delay between two successive refresh cycles. The
SDRAM device requires a refresh every 15.625µs or 7.81µs. With a 100MHz fre-
for details about Extended Load Mode Register command.
Section 16.8.1
for details about Load Mode Register command.
Section
222
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