SAM9G46 Atmel Corporation, SAM9G46 Datasheet - Page 28

• Manufacturer Part Number: SAM9G46
• Manufacturer: Atmel Corporation

Specifications of SAM9G46

• Flash (kbytes): 0 Kbytes
• Pin Count: 324
• Max. Operating Frequency: 400 MHz
• Cpu: ARM926
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 160
• Ext Interrupts: 160
• Usb Transceiver: 3
• Usb Speed: Hi-Speed
• Usb Interface: Host, Device
• Spi: 2
• Twi (i2c): 2
• Uart: 5
• Lin: 4
• Ssc: 2
• Ethernet: 1
• Sd / Emmc: 2
• Graphic Lcd: Yes
• Video Decoder: No
• Camera Interface: Yes
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 440
• Resistive Touch Screen: Yes
• Temp. Sensor: No
• Crypto Engine: AES/DES
• Sram (kbytes): 64
• Self Program Memory: NO
• External Bus Interface: 2
• Dram Memory: DDR2/LPDDR, SDRAM/LPSDR
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8/3.3
• Operating Voltage (vcc): 0.9 to 1.1
• Fpu: No
• Mpu / Mmu: No/Yes
• Timers: 6
• Output Compare Channels: 6
• Input Capture Channels: 6
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: No

7.3.2.1
7.3.2.2
7.3.2.3
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SAM9G46
Static Memory Controller
DDR2/SDR Controller
NAND Flash Error Corrected Code Controller
• 8-, 16- or 32-bit Data Bus
• Multiple Access Modes supported
• Multiple device adaptability
• Multiple Wait State Management
• Slow Clock mode supported
• Supports DDR2/LPDDR2, SDR-SDRAM and LPSDR
• Numerous Configurations Supported
• Programming Facilities
• Energy-saving Capabilities
• SDRAM Power-up Initialization by Software
• CAS Latency of 2, 3 Supported
• Auto Precharge Command Not Used
• SDR-SDRAM with 16-bit Datapath and Eight Columns Not Supported
• Tracking the accesses to a NAND Flash device by triggering on the corresponding chip select
• Single bit error correction and 2-bit Random detection.
• Automatic Hamming Code Calculation while writing
– Static Memory Controller on NCS3, Optional NAND Flash support
– Static Memory Controller on NCS4 - NCS5, Optional CompactFlash
– Byte Write or Byte Select Lines
– Asynchronous read in Page Mode supported (4- up to 32-byte page size)
– Control signals programmable setup, pulse and hold time for each Memory Bank
– Programmable Wait State Generation
– External Wait Request
– Programmable Data Float Time
– 2K, 4K, 8K, 16K Row Address Memory Parts
– SDRAM with Four Internal Banks
– SDR-SDRAM with 16- or 32- bit Data Path
– DDR2/LPDDR with 16- bit Data Path
– One Chip Select for SDRAM Device (256 Mbyte Address Space)
– Multibank Ping-pong Access (Up to 4 Banks Opened at Same Time = Reduces
– Timing Parameters Specified by Software
– Automatic Refresh Operation, Refresh Rate is Programmable
– Automatic Update of DS, TCR and PASR Parameters (LPSDR)
– Self-refresh, Power-down and Deep Power Modes Supported
– Clock Frequency Change in Precharge Power-down Mode Not Supported
Average Latency of Transactions)
11028CS–ATARM–20-Apr-11
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