AD8021 Analog Devices, AD8021 Datasheet - Page 7

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AD8021

Manufacturer Part Number
AD8021
Description
Low Noise, High Speed Amplifier for 16-Bit Systems
Manufacturer
Analog Devices
Datasheet

Specifications of AD8021

-3db Bandwidth
490MHz
Slew Rate
150V/µs
Vos
400µV
Ib
7.5µA
# Opamps Per Pkg
1
Input Noise (nv/rthz)
2.1nV/rtHz
Vcc-vee
4.5V to 24V
Isy Per Amplifier
7.7mA
Packages
SOIC,SOP

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ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Power Dissipation
Input Voltage (Common Mode)
Differential Input Voltage
Differential Input Current
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10 sec)
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
The AD8021 inputs are protected by diodes. Current-limiting resistors are
not used to preserve the low noise. If a differential input exceeds ±0.8 V, the
input current should be limited to ±10 mA.
1
Rating
26.4 V
Observed power
derating curves
±V
±0.8 V
±10 mA
Observed power
derating curves
−65°C to +125°C
−40°C to +85°C
300°C
S
± 1 V
Rev. F | Page 7 of 28
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8021 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Temporarily
exceeding this limit can cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8021 is internally short-circuit protected, this can
not be sufficient to guarantee that the maximum junction tem-
perature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum
power derating curves.
1
Specification is for device in free air: 8-lead SOIC: θ
MSOP: θ
0.01
2.0
1.5
1.0
0.5
JA
Figure 3. Maximum Power Dissipation vs. Temperature
= 145°C/W.
–55 –45 –35 –25 –15 –5 5 15 25 35 45
AMBIENT TEMPERATURE (°C)
8-LEAD MSOP
8-LEAD SOIC
JA
= 125°C/W; 8-lead
55 65 75
AD8021
1

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