AD8047 Analog Devices, AD8047 Datasheet - Page 3

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AD8047

Manufacturer Part Number
AD8047
Description
250 MHz, General Purpose Voltage Feedback Op Amps Gain 1 Stable
Manufacturer
Analog Devices
Datasheet

Specifications of AD8047

Vcc-vee
6V to 12V
Isy Per Amplifier
6.6mA
Packages
DIP,SOIC
-3db Bandwidth
250MHz
Slew Rate
750V/µs
Vos
1mV
Ib
1µA
# Opamps Per Pkg
1
Input Noise (nv/rthz)
5.2nV/rtHz

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AD8047AR
Manufacturer:
ADI/亚德诺
Quantity:
20 000
Part Number:
AD8047ARZ
Manufacturer:
ROHM
Quantity:
6 232
Part Number:
AD8047ARZ
Manufacturer:
ADI/亚德诺
Quantity:
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ABSOLUTE MAXIMUM RATINGS
Supply Voltage, (+V
Voltage Swing
Internal Power Dissipation
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
Output Short-Circuit Duration . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range (N, R) . . . . . . . –65 C to +125 C
Operating Temperature Range (A Grade) . . . –40 C to +85 C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300 C
NOTES
1
2
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8047/AD8048 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
REV. A
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Specification is for device in free air: 8-Lead PDIP Package,
SOIC Package,
AD8047 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 V-MHz
AD8048 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 V-MHz
Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.9 W
. . . . . . . . . . . . . . . . . . Observe Power Derating Curves
–IN
–IN
JA
Dimensions shown in inches and (mm)
METALLIZATION PHOTOS
= 140 C/W
Bandwidth Product
S
Connect Substrate to –V
) – (–V
+IN
+IN
2
0.044
(1.13)
0.044
(1.13)
AD8047
AD8048
S
) . . . . . . . . . . . . . . . . . . . . 12.6 V
+V
+V
S
S
–V
–V
S
S
1
S
.
V
V
OUT
OUT
JA
0.045
(1.14)
(1.14)
0.045
= 90 C/W; 8-Lead
1.2 V
V
S
–3–
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by these devices
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150 C. Exceeding this limit temporarily
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package. Exceeding a
junction temperature of 175 C for an extended period can
result in device failure.
While the AD8047 and AD8048 are internally short circuit
protected, this may not be sufficient to guarantee that the maxi-
mum junction temperature (150 C) is not exceeded under all
conditions. To ensure proper operation, it is necessary to observe
the maximum power derating curves.
Model
AD8047AN
AD8047AR
AD8047AR-REEL
AD8047AR-REEL7
AD8048AN
AD8048AR
AD8048AR-REEL
AD8048AR-REEL7
*N = PDIP, R= SOIC
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature
2.0
1.5
1.0
0.5
–50
0
–40
–30
–20
Temperature
Range
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
–40 C to +85 C
ORDERING GUIDE
–10
AMBIENT TEMPERATURE ( C)
8-PIN PDIP PACKAGE
8-PIN SOIC PACKAGE
0 10
20 30 40
AD8047/AD8048
Package
Description
PDIP
SOIC
SOIC
SOIC
PDIP
SOIC
SOIC
SOIC
50
T
60 70
J
= +150 C
80
Package
Option*
N-8
R-8
R-8
R-8
N-8
R-8
R-8
R-8
90

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