PMEGXX05EH_EJ_SER NXP Semiconductors, PMEGXX05EH_EJ_SER Datasheet - Page 4

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PMEGXX05EH_EJ_SER

Manufacturer Part Number
PMEGXX05EH_EJ_SER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection encapsulated in small SMD package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
6. Thermal characteristics
PMEGXX05EH_EJ_SER_2
Product data sheet
Table 7.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power
losses P
losses P
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Thermal characteristics
R
R
are a significant part of the total power losses. Nomograms for determining the reverse power
and I
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
SOD123F
SOD323F
SOD123F
SOD323F
F(AV)
rating will be available on request.
Rev. 02 — 13 January 2010
0.5 A very low V
PMEGxx05EH/EJ series
Conditions
in free air
F
MEGA Schottky barrier rectifiers
[1][2]
[1][3]
Min
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Typ
-
-
-
-
-
Max
330
350
150
60
55
2
.
Unit
K/W
K/W
K/W
K/W
K/W
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