PMEGXX05EH_EJ_SER NXP Semiconductors, PMEGXX05EH_EJ_SER Datasheet - Page 4
PMEGXX05EH_EJ_SER
Manufacturer Part Number
PMEGXX05EH_EJ_SER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection encapsulated in small SMD package
Manufacturer
NXP Semiconductors
Datasheet
1.PMEGXX05EH_EJ_SER.pdf
(13 pages)
NXP Semiconductors
6. Thermal characteristics
PMEGXX05EH_EJ_SER_2
Product data sheet
Table 7.
[1]
[2]
[3]
Symbol
R
R
th(j-a)
th(j-sp)
Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power
losses P
losses P
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Thermal characteristics
R
R
are a significant part of the total power losses. Nomograms for determining the reverse power
and I
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
SOD123F
SOD323F
SOD123F
SOD323F
F(AV)
rating will be available on request.
Rev. 02 — 13 January 2010
0.5 A very low V
PMEGxx05EH/EJ series
Conditions
in free air
F
MEGA Schottky barrier rectifiers
[1][2]
[1][3]
Min
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Typ
-
-
-
-
-
Max
330
350
150
60
55
2
.
Unit
K/W
K/W
K/W
K/W
K/W
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