BAS101_BAS101S NXP Semiconductors, BAS101_BAS101S Datasheet - Page 3

• Manufacturer Part Number: BAS101_BAS101S
• Description: High-voltage switching diodes, encapsulated in a SOT23 small Surface-MountedDevice (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS101_BAS101S_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
Symbol
Per diode
V
V
I
I
I
Per device
P
T
T
T
Symbol
Per device
R
F
FRM
FSM
j
amb
stg
RRM
R
tot
th(j-a)
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
j
= 25 °C prior to surge
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 02 — 14 December 2009
Conditions
in free air
Conditions
series connection
series connection
series connection
t
δ ≤ 0.25
square wave;
t
T
p
p
amb
≤ 1 ms;
≤ 1 μs
≤ 25 °C
BAS101; BAS101S
High-voltage switching diodes
[1]
[1]
[2]
Min
-
-
Min
-
-
-
-
-
-
-
-
-
−65
−65
Typ
-
© NXP B.V. 2009. All rights reserved.
Max
300
600
300
600
200
100
1
9
250
150
+150
+150
Max
500
Unit
V
V
V
V
mA
mA
A
A
mW
°C
°C
°C
Unit
K/W
3 of 11