BAS101_BAS101S NXP Semiconductors, BAS101_BAS101S Datasheet - Page 4

• Manufacturer Part Number: BAS101_BAS101S
• Description: High-voltage switching diodes, encapsulated in a SOT23 small Surface-MountedDevice (SMD) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
BAS101_BAS101S_2
Product data sheet
Table 8.
T
[1]
[2]
Symbol Parameter
Per diode
V
I
C
t
R
rr
amb
F
d
Pulse test: t
When switched from I
= 25
°
forward voltage
reverse current
diode capacitance
reverse recovery time
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 14 December 2009
F
= 30 mA to I
R
Conditions
I
V
V
V
= 30 mA; R
F
R
R
R
= 100 mA
= 250 V
= 250 V; T
= 0 V; f = 1 MHz
L
= 100 Ω; measured at I
j
= 150 °C
BAS101; BAS101S
High-voltage switching diodes
[1]
[2]
Min
-
-
-
-
-
R
= 3 mA.
Typ
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
1.1
150
100
2
50
Unit
V
nA
μA
pF
ns
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