BUK626R2-40C NXP Semiconductors, BUK626R2-40C Datasheet - Page 11
BUK626R2-40C
Manufacturer Part Number
BUK626R2-40C
Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK626R2-40C.pdf
(14 pages)
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NXP Semiconductors
8. Revision history
Table 7.
BUK626R2-40C
Product data sheet
Document ID
BUK626R2-40C v.1
Revision history
Release date
20110712
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 12 July 2011
N-channel TrenchMOS intermediate level FET
Change notice
-
BUK626R2-40C
Supersedes
-
© NXP B.V. 2011. All rights reserved.
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