BUK626R2-40C NXP Semiconductors, BUK626R2-40C Datasheet - Page 3

• Manufacturer Part Number: BUK626R2-40C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
BUK626R2-40C
Product data sheet
Symbol
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
GS
tot
DS(AL)S
DS(AL)R
-16V accumulated duration not to exceed 168 hrs.
Accumulated pulse duration not to exceed 5mins.
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
All information provided in this document is subject to legal disclaimers.
Conditions
T
DC
Pulsed
T
T
T
see
T
T
I
V
pulsed; t
D
j
mb
mb
mb
mb
mb
GS
≥ 25 °C; T
= 90 A; V
Figure 3
Rev. 1 — 12 July 2011
= 25 °C; V
= 100 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 10 V; T
p
≤ 10 µs; T
sup
j
≤ 175 °C
j(init)
GS
≤ 40 V; R
GS
Figure 2
= 10 V; see
= 25 °C; unclamped
= 10 V; see
mb
p
N-channel TrenchMOS intermediate level FET
= 25 °C
≤ 10 µs;
GS
= 50 Ω;
Figure 1
Figure 1
BUK626R2-40C
[1]
[2]
[3]
[3]
[4][5][6]
Min
-
-16
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2011. All rights reserved.
175
175
Max
40
16
20
90
70
397
128
90
397
113
-
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
J
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