BUK7E2R7-30B NXP Semiconductors, BUK7E2R7-30B Datasheet
BUK7E2R7-30B
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BUK7E2R7-30B Summary of contents
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... BUK7E2R7-30B N-channel TrenchMOS standard level FET Rev. 04 — 7 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... N-channel TrenchMOS standard level FET Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B Graphic symbol mbb076 Version SOT226 © NXP B.V. 2010. All rights reserved ...
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... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B Min Typ Max - - - [ 241 [ ...
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... Fig 2. Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B N-channel TrenchMOS standard level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 03ng27 = 10 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7E2R7-30B Product data sheet Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B N-channel TrenchMOS standard level FET Min Typ - - - 60 03ng28 t p δ ...
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... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B Min Typ Max Unit ...
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... DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B N-channel TrenchMOS standard level FET 5 R DSon (mΩ Drain-source on-state resistance as a function of drain current; typical values ...
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... Label 210 280 350 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
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... ° 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B N-channel TrenchMOS standard level FET 0 − function of drain-source voltage; typical values 03nh09 0.8 1.0 V (V) SD © NXP B.V. 2010. All rights reserved. ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B N-channel TrenchMOS standard level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2010. All rights reserved. ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK7E2R7-30B separated from data sheet BUK75_76_7E2R7_30B_3. Product data All information provided in this document is subject to legal disclaimers. ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 June 2010 BUK7E2R7-30B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 June 2010 Document identifier: BUK7E2R7-30B ...