BUK7E2R7-30B NXP Semiconductors, BUK7E2R7-30B Datasheet - Page 8

• Manufacturer Part Number: BUK7E2R7-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7E2R7-30B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
10
75
50
25
0
8
6
4
2
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
70
5
2
T
140
5.5
j
= 175 °C
210
Label is V
6
4
V
T
280
All information provided in this document is subject to legal disclaimers.
GS
j
= 25 °C
GS
6.5
I
(V)
D
03nh12
03nh15
(V)
7
(A)
8
10
350
6
Rev. 04 — 7 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7E2R7-30B
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
(°C)
( ° C)
03aa32
03aa27
180
180
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