BUK7E2R7-30B NXP Semiconductors, BUK7E2R7-30B Datasheet - Page 5
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BUK7E2R7-30B
Manufacturer Part Number
BUK7E2R7-30B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7E2R7-30B.pdf
(14 pages)
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK7E2R7-30B
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7E2R7-30B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 04 — 7 June 2010
Conditions
see
vertical in still air
Figure 4
10
−3
10
−2
N-channel TrenchMOS standard level FET
P
10
t
p
−1
BUK7E2R7-30B
T
t
p
δ =
Min
-
-
(s)
03ng28
T
t
t
p
1
Typ
-
60
© NXP B.V. 2010. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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