BUK7E2R7-30B NXP Semiconductors, BUK7E2R7-30B Datasheet - Page 2
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/52/415241/sot226_3d_sml.gif)
BUK7E2R7-30B
Manufacturer Part Number
BUK7E2R7-30B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7E2R7-30B.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK7E2R7-30B
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7E2R7-30B
Product data sheet
Pin
1
2
3
mb
Type number
BUK7E2R7-30B
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Package
Name
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 June 2010
Simplified outline
SOT226 (I2PAK)
1
mb
2
3
N-channel TrenchMOS standard level FET
Graphic symbol
BUK7E2R7-30B
mbb076
G
© NXP B.V. 2010. All rights reserved.
D
S
Version
SOT226
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