2N7002K NXP Semiconductors, 2N7002K Datasheet
2N7002K
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2N7002K Summary of contents
Page 1
... TrenchMOS™ logic level FET Rev. 01 — 20 October 2003 M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level compatible Subminiature surface mount package 1.3 Applications Relay driver 1.4 Quick reference data ...
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... Figure pulsed Figure Figure pulsed Human Body Model 100 pF 1.5 k Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET Version SOT23 Min Max Unit - 340 mA - ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET 03aa25 50 100 150 200 ------------------- 100 03an66 100 s ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 11703 Product data Conditions Figure 4 minimum footprint; mounted on a printed-circuit board Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET Min Typ Max Unit - - 150 K/W - ...
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... 300 mA Figure 300 mA; dI /dt = 100 Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET Min Typ Max Unit 0.6 - ...
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... 0.6 0 0.4 0 ---------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET 03an72 V DS > DSon 150 ( DSon 03aa28 0 60 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (V) Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET 03aa37 min typ 0 0.6 1 03aa46 C iss C oss C rss 10 2 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET 03ab09 0.3 0.6 0.9 1 (nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20031020 Product data (9397 750 11703) 9397 750 11703 Product data Rev. 01 — 20 October 2003 2N7002K TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 20 October 2003 Rev. 01 — 20 October 2003 2N7002K 2N7002K TrenchMOS™ logic level FET TrenchMOS™ logic level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 October 2003 Document order number: 9397 750 11703 2N7002K TrenchMOS™ logic level FET ...