2N7002K NXP Semiconductors, 2N7002K Datasheet - Page 5

• Manufacturer Part Number: 2N7002K
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 11703
Product data
Symbol Parameter
Static characteristics
V
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
Source-drain diode
V
t
Q
DSS
GSS
on
off
rr
j
(BR)DSS
(BR)GSS
GS(th)
SD
DSon
iss
oss
rss
r
= 25 C unless otherwise specified.
drain-source breakdown voltage
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
I
V
V
V
V
V
Figure 11
V
V
I
V
D
G
D
S
S
Rev. 01 — 20 October 2003
DS
GS
GS
GS
GS
DD
GS
GS
T
T
T
T
T
T
T
T
T
= 300 mA; V
= 300 mA; dI
= 10 A; V
= 1 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 48 V; V
= 10 V; V
= 10 V; I
= 4.5 V; I
= 0 V; V
= 50 V; R
= 10 V; R
= 0 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
DS
DS
R
D
GS
D
DS
GS
L
G
= 25 V
= 500 mA;
GS
DS
S
= V
= 200 mA;
= 10 V; f = 1 MHz;
= 250 ;
= 50 ; R
= 0 V
/dt = 100 A/ s;
= 0 V
= 0 V
= 0 V
= 0 V;
GS
;
Figure 9
Figure 12
GS
Figure 7
Figure 7
= 50
and
and
8
8
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
60
55
16
1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
75
-
22
2
-
-
0.01
-
50
2.8
5.2
3.8
13
8
4
3
9
0.93
30
30
2N7002K
Max
-
-
-
-
-
3.5
1
10
500
3.9
7.2
5.3
40
30
10
10
15
1.5
-
-
Unit
V
V
V
V
V
V
V
nA
pF
pF
pF
ns
ns
V
ns
nC
5 of 12
A
A