2N7002K NXP Semiconductors, 2N7002K Datasheet - Page 2

• Manufacturer Part Number: 2N7002K
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 11703
Product data
Type number
2N7002K
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Electrostatic discharge voltage
V
D
DM
S
SM
DS
DGR
GS
tot
stg
j
esd
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
electrostatic discharge voltage
Ordering information
Limiting values
Package
Name
SOT23
Description
Plastic surface mounted package; 3 leads.
Conditions
25 C
25 C
T
T
T
T
Human Body Model 1; C = 100 pF; R = 1.5 k
Rev. 01 — 20 October 2003
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
T
T
j
j
150 C
150 C; R
Figure 1
GS
GS
= 10 V;
= 10 V;
p
p
GS
10 s;
10 s
Figure 2
= 20 k
Figure 2
Figure 3
and
3
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
65
65
2N7002K
Max
60
60
340
215
680
0.83
+150
+150
340
680
1
15
Version
SOT23
2 of 12
Unit
V
V
V
mA
mA
mA
W
mA
mA
kV
C
C