PH3120L NXP Semiconductors, PH3120L Datasheet - Page 3

• Manufacturer Part Number: PH3120L
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PH3120L_3
Product data sheet
Fig 1.
Fig 3.
(%)
I
(A)
der
I
120
D
10
10
80
40
10
0
3
2
1
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
Limit R
100
DSon
= V
DS
150
/ I
D
T
003aaa628
mb
1
(°C)
200
Rev. 03 — 30 March 2009
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
100 ms
1 ms
10 ms
100 μ s
t
p
100
= 10 μ s
V
DS
(V)
150
PH3120L
© NXP B.V. 2009. All rights reserved.
T
003aaa360
mb
03aa15
(°C)
10
200
2
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