PH3120L NXP Semiconductors, PH3120L Datasheet - Page 7

• Manufacturer Part Number: PH3120L
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PH3120L_3
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
40
30
20
10
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
1.9
25
2
10
50
2.1
V
GS
(V) = 2.5
20
75
4.5
Q
I
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D
G
(A)
(nC)
10
100
30
Rev. 03 — 30 March 2009
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
a
10
C
10
10
1.5
0.5
4
3
2
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-1
N-channel TrenchMOS logic level FET
0
1
60
10
120
PH3120L
© NXP B.V. 2009. All rights reserved.
V
C
C
C
DS
03aa27
003aaa365
T
oss
iss
rss
j
(V)
( ° C)
180
10
2
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