PH3120L NXP Semiconductors, PH3120L Datasheet - Page 5

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PH3120L

Manufacturer Part Number
PH3120L
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PH3120L,115
Manufacturer:
PANASONIC
Quantity:
73 000
Part Number:
PH3120LЈ¬115
Manufacturer:
NXP
Quantity:
1 500
NXP Semiconductors
6. Characteristics
Table 6.
PH3120L_3
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
Conditions
I
I
see
I
see
V
V
V
V
V
see
V
see
V
see
I
T
V
T
V
R
I
see
I
V
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
G(ext)
DS
= 10 mA; V
= 1 mA; V
= 1 mA; V
= 50 A; V
= 25 °C; see
= 25 °C; see
= 25 A; V
= 20 A; dI
Figure
Figure
Figure
Figure
Figure
Figure 13
= 20 V; V
= 20 V; V
= 10 V; V
= 10 V; R
= 20 V; T
= 15 V; V
= -15 V; V
= 10 V; I
= 4.5 V; I
= 4.5 V; I
= 4.7 Ω; T
7; see
7; see
9; see
9; see
9; see
GS
DS
S
Rev. 03 — 30 March 2009
DS
DS
D
/dt = -100 A/µs; V
D
D
j
GS
GS
GS
GS
DS
L
DS
= 25 °C
= 25 A; T
= 10 V; V
= 0 V; T
= V
= V
= 25 A; T
= 25 A; T
Figure 11
Figure 12
= 0.4 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 25 °C; I
Figure 8
Figure 8
Figure 10
Figure 10
Figure 10
GS
GS
; T
; T
j
= 25 °C;
j
j
j
GS
j
j
j
j
j
j
= 150 °C;
= 25 °C;
= 25 °C;
j
= 25 °C
GS
= 150 °C
= 25 °C
= 25 °C
= 150 °C;
= 25 °C;
= 25 °C
= 4.5 V;
D
= 4.5 V;
= 25 A
GS
= 0 V;
N-channel TrenchMOS logic level FET
Min
20
0.65
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
0.06
2
2
2.25
5.1
3
48.5
12.7
12.8
4457
1480
940
34
90
114
88
0.77
63
PH3120L
© NXP B.V. 2009. All rights reserved.
Max
-
-
2
500
1
100
100
2.65
6.3
3.7
-
-
-
-
-
-
-
-
-
-
1.2
-
Unit
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
5 of 12

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