PHB20N06T NXP Semiconductors, PHB20N06T Datasheet
PHB20N06T
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PHB20N06T Summary of contents
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... PHB20N06T N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω; unclamped R GS Rev. 02 — 25 November 2009 PHB20N06T N-channel TrenchMOS standard level FET Graphic symbol mbb076 Version SOT404 Min Max - - ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = DSon δ Rev. 02 — 25 November 2009 PHB20N06T N-channel TrenchMOS standard level FET 03aa16 0 50 100 150 T (°C) mb 003aaa043 = 10 μ 100 μ (V) VDS © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PHB20N06T_2 Product data sheet Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint −5 −4 − Rev. 02 — 25 November 2009 PHB20N06T N-channel TrenchMOS standard level FET Min Typ Max - - 2 003aaa044 t p δ ...
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... ° ° see Figure /dt = -100 A/µ - ° Rev. 02 — 25 November 2009 PHB20N06T N-channel TrenchMOS standard level FET Min Typ Max 4 0. 500 ...
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... V (V) GS Fig 8. Forward transconductance as a function of drain current; typical values Rev. 02 — 25 November 2009 PHB20N06T N-channel TrenchMOS standard level FET 003aaa051 (V) GS 003aaa047 (A) D © NXP B.V. 2009. All rights reserved ...
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... Fig 10. Gate-source threshold voltage as a function of junction temperature 003aaa046 2 1.8 1.2 0.6 0 − (A) D Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 25 November 2009 PHB20N06T 03aa32 max typ min 0 60 120 180 T (°C) j 03aa28 0 60 120 180 T (°C) j © ...
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... ° 0.5 1.0 1.5 Rev. 02 — 25 November 2009 PHB20N06T N-channel TrenchMOS standard level FET 003aaa048 Ciss Coss Crss −3 − (V) DS 003aaa052 2.0 V (V) SD © NXP B.V. 2009. All rights reserved. ...
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... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 25 November 2009 PHB20N06T N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
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... Product data sheet - The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Typenumber PHB20N06T separated from data sheet PHP20N06T_PHB20N06T-01. Product - specification Rev. 02 — 25 November 2009 ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 02 — 25 November 2009 PHB20N06T N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 November 2009 Document identifier: PHB20N06T_2 All rights reserved. ...