PHB20N06T NXP Semiconductors, PHB20N06T Datasheet - Page 8

• Manufacturer Part Number: PHB20N06T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB20N06T_2
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DD
= 14 V
5
(A)
I
S
10
120
100
V
80
60
40
20
DD
0
Q
0
= 44 V
G
003aaa050
(nC)
Rev. 02 — 25 November 2009
15
0.5
T
j
= 175 °C
1.0
Fig 14. Input, output and reverse transfer capacitances
Ciss,
Coss,
Crss
(pF)
T
200
100
600
500
400
300
j
= 25 °C
0
as a function of drain-source voltage; typical
values
1.5
10
N-channel TrenchMOS standard level FET
−3
003aaa052
V
SD
(V)
2.0
10
−2
1
PHB20N06T
Crss
10
© NXP B.V. 2009. All rights reserved.
V
Coss
DS
003aaa048
Ciss
(V)
10
2
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