PHB20N06T NXP Semiconductors, PHB20N06T Datasheet - Page 6

• Manufacturer Part Number: PHB20N06T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB20N06T_2
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
D
60
50
40
30
20
10
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
2
4
min
typ
6
4
V
GS
max
V
(V) =
8
GS
V
DS
003aaa045
16
12
10
9.0
8.0
7.5
7.0
6.5
6.0
5.0
(V)
03aa35
(V)
Rev. 02 — 25 November 2009
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
160
140
120
100
80
60
40
8
6
4
2
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
5
10
10
PHB20N06T
15
15
© NXP B.V. 2009. All rights reserved.
V
20
GS
003aaa047
003aaa051
I
(V)
D
(A)
25
20
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