PHK28NQ03LT NXP Semiconductors, PHK28NQ03LT Datasheet
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/50/415041/sot096-1_3d_sml.gif)
PHK28NQ03LT
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PHK28NQ03LT Summary of contents
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... PHK28NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 8 December 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... °C; t Figure °C; see Figure °C sp ≤ 10 µs; pulsed ° Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET Graphic symbol mbb076 4 Version SOT96-1 Min Max - ...
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... T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature = Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET 03aa17 0 50 100 150 T (°C) sp 03ak85 = 10 μ 100 μ 100 ms 2 ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PHK28NQ03LT_3 Product data sheet Conditions see Figure 4 −3 −2 − Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET Min Typ Max - - 20 03ak84 t p δ ...
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... °C; see Figure Ω Ω °C G(ext 2 ° see Figure 13 Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET Min Typ Max 0 2 500 - 0. ...
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... V GS(th) (V) 2 1.5 max 1 0 -60 V (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET 03ak88 V > DSon = 150 °C 25 ° (V) GS 03aa33 max typ min ...
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... C (pF (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET 03al00 0 60 120 T (°C) j 03ak90 C iss C oss C rss − ...
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... Fig 13. Source current as a function of source-drain voltage; typical values PHK28NQ03LT_3 Product data sheet ( °C 150 ° 0.3 0.6 0.9 Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET 03ak89 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.05 0.041 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC JEITA MS-012 Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET θ detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 ...
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... PHK28NQ03LT-01 20021212 (9397 750 10743) PHK28NQ03LT_3 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Product data - Product data - Rev. 03 — 8 December 2009 PHK28NQ03LT Supersedes PHK28NQ03LT-02 PHK28NQ03LT-01 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 December 2009 Document identifier: PHK28NQ03LT_3 All rights reserved. ...