PHK28NQ03LT NXP Semiconductors, PHK28NQ03LT Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHK28NQ03LT

Manufacturer Part Number
PHK28NQ03LT
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Simple gate drive required due to low
gate charge
DC-to-DC convertors
PHK28NQ03LT
N-channel TrenchMOS logic level FET
Rev. 03 — 8 December 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
see
V
V
see
V
T
j
sp
sp
j
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C; V
= 25 °C;
Figure 1
Figure 2
Figure 11
= 15 V; T
= 4.5 V; I
= 10 V; I
j
D
and
≤ 150 °C
D
j
GS
= 25 °C;
= 14 A;
= 14 A;
Figure 9
= 10 V;
3
Suitable for logic level gate drive
sources
Switched-mode power supplies
and
10
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
11.4
5.5
Max
30
23.7
6.25
-
6.5
Unit
V
A
W
nC
mΩ

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PHK28NQ03LT Summary of contents

Page 1

... PHK28NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 8 December 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... °C; t Figure °C; see Figure °C sp ≤ 10 µs; pulsed ° Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET Graphic symbol mbb076 4 Version SOT96-1 Min Max - ...

Page 3

... T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature = Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET 03aa17 0 50 100 150 T (°C) sp 03ak85 = 10 μ 100 μ 100 ms 2 ...

Page 4

... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PHK28NQ03LT_3 Product data sheet Conditions see Figure 4 −3 −2 − Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET Min Typ Max - - 20 03ak84 t p δ ...

Page 5

... °C; see Figure Ω Ω °C G(ext 2 ° see Figure 13 Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET Min Typ Max 0 2 500 - 0. ...

Page 6

... V GS(th) (V) 2 1.5 max 1 0 -60 V (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET 03ak88 V > DSon = 150 °C 25 ° (V) GS 03aa33 max typ min ...

Page 7

... C (pF (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET 03al00 0 60 120 T (°C) j 03ak90 C iss C oss C rss − ...

Page 8

... Fig 13. Source current as a function of source-drain voltage; typical values PHK28NQ03LT_3 Product data sheet ( °C 150 ° 0.3 0.6 0.9 Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET 03ak89 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...

Page 9

... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.05 0.041 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC JEITA MS-012 Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET θ detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 ...

Page 10

... PHK28NQ03LT-01 20021212 (9397 750 10743) PHK28NQ03LT_3 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Product data - Product data - Rev. 03 — 8 December 2009 PHK28NQ03LT Supersedes PHK28NQ03LT-02 PHK28NQ03LT-01 - © NXP B.V. 2009. All rights reserved ...

Page 11

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 03 — 8 December 2009 PHK28NQ03LT N-channel TrenchMOS logic level FET © NXP B.V. 2009. All rights reserved ...

Page 12

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 December 2009 Document identifier: PHK28NQ03LT_3 All rights reserved. ...

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